Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Madhur Bobde"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:69-73
A major limitation on the performance of high-voltage power semiconductor is the edge termination of the device. It is critical to maintain the breakdown voltage of the device without compromising the reliability of the device by controlling the surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa1d2e41903ba9d7fded3430128aa7e
https://doi.org/10.1109/tdmr.2016.2515507
https://doi.org/10.1109/tdmr.2016.2515507
Autor:
Sik K. Lui, Lei Zhang, Madhur Bobde, Anup Bhalla, Lingpeng Guan, Hamza Yilmaz, Karthik Padmanabhan
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we present a novel lateral/vertical hybrid super-junction structure that breaks the fundamental trade-off between the Rds.A and Charge imbalance window for a Super-Junction MOSFET. This device structure can continue the scaling of Supe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c1b856b645ad21e697a744c5c92443
https://doi.org/10.1109/ispsd.2018.8393625
https://doi.org/10.1109/ispsd.2018.8393625
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Trade-offs between the On Resistance and Linear Mode performance have been compared for different Low Voltage superjunction cell structures, including stripe-cell, closed-cell & orthogonal-cell. The closed-cell has measured R SP of 4.4mΩ·mm2, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b798e5e6fcaee378d60052b699637f3
https://doi.org/10.1109/ispsd.2018.8393669
https://doi.org/10.1109/ispsd.2018.8393669
Autor:
Anup Bhalla, Karthik Padmanabhan, Lingpeng Guan, Hamza Yilmaz, Madhur Bobde, Allan Chiu, Jongoh Kim, Wen-Jun Li, Lei Zhang
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd49ba3608a866d704d82e1ffbf06f6
https://doi.org/10.1109/ispsd.2015.7123474
https://doi.org/10.1109/ispsd.2015.7123474
Autor:
Lingpeng Guan, Lei Zhang, Jongoh Kim, Hamza Yilmaz, Madhur Bobde, Karthik Padmanabhan, Jun Hu
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A novel Trench Fast Recovery Diode (FRD) structure with injection control is proposed in this paper. The proposed structure achieves improved carrier profile without the need for excess lifetime control. This substantially improves the device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f553956ea6633635d2f500e5a44d59
https://doi.org/10.1109/ispsd.2014.6855966
https://doi.org/10.1109/ispsd.2014.6855966
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A trench shielded planar gate IGBT is proposed in this paper. The unique 3D top cell structure, combining high density trench and low channel density, offers an excellent conduction vs. switching loss trade-off and a significantly better Short-circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670e6194c7af02fb0b1f4b8702df50d1
https://doi.org/10.1109/ispsd.2013.6694390
https://doi.org/10.1109/ispsd.2013.6694390
Publikováno v:
IEEE Transactions on Electron Devices; Dec2021, Vol. 68 Issue 12, p5934-5980, 47p
A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness.
Autor:
Guan, Lingpeng, Bobde, Madhur, Padmanabhan, Karthik, Yilmaz, Hamza, Bhalla, Anup, Zhang, Lei, Chiu, Allan, Kim, Jongoh, Li, Wenjun
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p401-404, 4p
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p1-11, 11p
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Mar2016, Vol. 16 Issue 1, p69-73, 5p