Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Madhu Sudan Kayastha"'
Autor:
Madhu Sudan Kayastha
Publikováno v:
Kathford Journal of Engineering and Management. 1
Warm welcome to the first issue of KATHFORD Journal!!! It is my pleasure and great privilege to present this journal "Kathford Journal of Engineering and Management (KJEM), a blind peer-reviewed journal of Kathford International College of Engineerin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f265c940e780dc37a04a458d98b22bfc
https://doi.org/10.3126/kjem.v1i1.22011
https://doi.org/10.3126/kjem.v1i1.22011
Publikováno v:
Optics and Photonics Journal. :99-103
We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378afd09c7acc987d993ef2673a9663e
https://doi.org/10.4236/opj.2014.45010
https://doi.org/10.4236/opj.2014.45010
Autor:
Koichi Wakita, Y. Kawashimo, Sunil Adhikary, Sudip Adhikari, M. Umeno, Dilip Chandra Ghimire, Hare Ram Aryal, Madhu Sudan Kayastha, Hideo Uchida, T. Takeuchi, K. Murakami
Publikováno v:
Journal of Surface Engineered Materials and Advanced Technology. :178-183
Amorphous carbon (a-C) thin films have been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) on n-type silicon and quartz substrates, aiming at the application of the films for photovoltaic solar cells. Argon, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0b6f908b4c434308fb912e6a17e20e
https://doi.org/10.4236/jsemat.2013.33024
https://doi.org/10.4236/jsemat.2013.33024
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 133:1139-1144
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48e7e70bd9fafbc6c40734807f4642c2
https://doi.org/10.1541/ieejeiss.133.1139
https://doi.org/10.1541/ieejeiss.133.1139
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 131:290-295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d48cc08d678dce8d5df6f4a53a08cc3
https://doi.org/10.1541/ieejeiss.131.290
https://doi.org/10.1541/ieejeiss.131.290
Publikováno v:
2012 Photonics Global Conference (PGC).
The absorption spectrum in high-purity GaAs has been theoretically studied in the presence of electric field taking into account of excitonic transition and continuum band transition at room temperature. We have calculated the Stark shift, height of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830e6987e7a1a0099b42af0bbeb3b3cc
https://doi.org/10.1109/pgc.2012.6458083
https://doi.org/10.1109/pgc.2012.6458083
Publikováno v:
SPIE Proceedings.
We have compared and analyzed the theoretical possibility for the extreme reduction in the linewidth enhancement (α- factor) in strained layer quantum-well (QW) lasers for AlGaInAs and InGaAsP material. Valence band structure and optical gain in bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d93503d978a7ebca8fffaa81642b05cf
https://doi.org/10.1117/12.909851
https://doi.org/10.1117/12.909851
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c869abc2df02dc5a7206453f0816973
https://doi.org/10.7567/ssdm.2012.ps-7-12
https://doi.org/10.7567/ssdm.2012.ps-7-12
Publikováno v:
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).
Highly efficient surface normal spatial light modulators (SLMs) using ultrahigh purity GaAs layers (30 μm thick) grown on (100) — oriented n+ — GaAs substrate by liquid phase epitaxy (LPE) method have been realized. The extinction ratio of 25 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44da6a3972560b27f04e187e5f3096fb
https://doi.org/10.1109/iciprm.2010.5516076
https://doi.org/10.1109/iciprm.2010.5516076