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pro vyhledávání: '"Madduri Sai Chandu"'
Autor:
Sumit Kale, Madduri Sai Chandu
Publikováno v:
Silicon. 14:935-941
In this paper, to solve the problem of higher ambipolar leakage current (Iambipolar) of Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS SBMOS), we have incorporated dual metal gate (DMG) in place of single metal