Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Madani labed"'
Autor:
Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton
Publikováno v:
AIP Advances, Vol 14, Iss 10, Pp 105326-105326-9 (2024)
Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The
Externí odkaz:
https://doaj.org/article/b3fe746cf9ae41f5aca4c9c26fc93dbf
Autor:
Tan Hoang Vu Nguyen, Mohammad Tauquir Alam Shamim Shaikh, Ho Jung Jeon, Thi Thanh Huong Vu, Chowdam Venkata Prasad, Madani Labed, Sangmo Kim, You Seung Rim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract Biocompatible and biodegradable resistive random‐access memory devices using Mg/agarose/Al2O3/Mg‐based organic/inorganic structures are reported, showing nonvolatile bipolar resistive switching memory behavior. The organic/inorganic‐ba
Externí odkaz:
https://doaj.org/article/a4c7098b84aa43dbbb35619c12c4af25
Autor:
Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Jang Hyeok Park, Kyong Jae Kim, Sangmo Kim, Sinsu Kyoung, Nouredine Sengouga, You Seung Rim
Publikováno v:
Materials Today Advances, Vol 19, Iss , Pp 100402- (2023)
In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for β-Ga2O3-based power device applications. Result
Externí odkaz:
https://doaj.org/article/2b6a7176e8ed4376a4a1fc90c6e0efe7
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 827 (2022)
Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 s
Externí odkaz:
https://doaj.org/article/20e2c21d26a84ab1b88019b3ee3c86e1
Autor:
Madani Labed, Hojoong Kim, Joon Hui Park, Mohamed Labed, Afak Meftah, Nouredine Sengouga, You Seung Rim
Publikováno v:
Nanomaterials, Vol 12, Iss 7, p 1061 (2022)
In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical si
Externí odkaz:
https://doaj.org/article/c5f859f505af4e2f8a7563106f27a0c7
Autor:
Almalki, Abdulaziz, Madani, Labed, Sengouga, Nouredine, Alhassan, Sultan, Alotaibi, Saud, Alhassni, Amra, Almunyif, Amjad, Chauhan, Jasbinder S., Henini, Mohamed, Galeti, Helder Vinicius Avanço, Gobato, Yara Galvão, de Godoy, Marcio Peron Franco, Andrade, Marcelo B., Souto, Sérgio, Zhou, Hong, Wang, Boyan, Xiao, Ming, Qin, Yuan, Zhang, Yuhao
Publikováno v:
In Materials Today Electronics June 2023 4
Autor:
Rima Cherroun, Afak Meftah, Madani Labed, Nouredine Sengouga, Amjad Meftah, Hojoong Kim, You Seung Rim
Publikováno v:
Journal of Electronic Materials. 52:1448-1460
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::991d76baf2ef370031138157220841a6
https://doi.org/10.1007/s11664-022-10081-3
https://doi.org/10.1007/s11664-022-10081-3
Autor:
Saud Alotaibi, Marcio A. Correa, Madani labed, Abdulaziz lmalki, Sultan Saleh Alhassan, Maryam Al Huwayz, Yara Galvão Gobato, Hassanet Sodabanlu, M. Sugiyama, Helder Vinicius Avanço Galeti, Nouredine Sengouga, Mohamed Henini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f16c30c5b9071a7a1d0de7a9d2878b6
https://doi.org/10.2139/ssrn.4409071
https://doi.org/10.2139/ssrn.4409071
Autor:
Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Kyong Jae Kim, You Seung Rim
Publikováno v:
Materials Today Physics. 35:101095
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4569cad88143d9a88d12e34746d23da8
https://doi.org/10.1016/j.mtphys.2023.101095
https://doi.org/10.1016/j.mtphys.2023.101095
Autor:
Jung Yeop Hong, Afak Meftah, Nouredine Sengouga, You Seung Rim, Madani Labed, Young-Kyun Jung, Jun Hui Park
Publikováno v:
ACS Applied Electronic Materials. 3:3667-3673
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cfccb5f60ae610166257c7e6ba5f4f2
https://doi.org/10.1021/acsaelm.1c00647
https://doi.org/10.1021/acsaelm.1c00647