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pro vyhledávání: '"Macro Wu"'
Autor:
Ailin Zhang, Yan Wu, Junwu Zhang, Andy Xie, Macro Wu, Honyin Chiu, Y.B. Zou, Simon He, Thomas Zhao, Roy K.-Y. Wong, Henry Liao, Jeff Zhang, Chunhua Zhou, Martin Zhang, Seiya Li, John Lee, Chen Po-Hui
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A novel strain engineering is reported to realize enhancement-mode high electron mobility transistors (HEMTs) with ultralow specific on-resistance ( $\boldsymbol{R}_{\mathbf{on},\mathbf{sp}}$ ) fabricated on 200 mm CMOS-compatible process platform. I