Výsledky vyhledávání - "Maciej Matys"

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

Autor: Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

Publikováno v: Applied Physics Letters. 121(20):203507

Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion im

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a0fe60fcb9929231bd9dce604e9a055
https://nagoya.repo.nii.ac.jp/records/2006473

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Autor: Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski, Michal Bockowski, Jun Suda

Publikováno v: Journal of Applied Physics. 132:130901

P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance of vertical GaN power devices. UHPA allows a high-temperatu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20c67f005e6cda55670a75565d0ad79e
https://doi.org/10.1063/5.0107921

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Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

Autor: Ali Baratov, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Masaki Ishiguro, Shogo Maeda, Takahiro Igarashi, Toi Nezu, Zenji Yatabe, Maciej Matys, Tetsu Kachi, Boguslawa Adamowicz, Akio Wakejima, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar

Publikováno v: Applied Physics Express. 15:104002

We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al2O3/AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f5a76d3f9560b4dc9a2993a5a8b937b
https://doi.org/10.35848/1882-0786/ac8f13

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Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

Autor: Takashi Ishida, KyungPil Nam, Maciej Matys, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

Publikováno v: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51afaa2486c6b1cf0cab8a5f968266f9
https://doi.org/10.7567/ssdm.2020.d-2-02

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