Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Maciej Kozubal"'
Autor:
Joanna Jankowska-Śliwińska, Kamil Kosiel, Maciej Kozubal, Anna Szerling, Krzysztof Zaraska, Krzysztof Grabczewski, Piotr Polak, Renata Kruszka, Laura Stanco, Anna Niedzwiecka, Antonina Naskalska, Agnieszka Dabrowska, Krzysztof Pyrc
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XIX.
Autor:
Kamil Kosiel, Joanna Jankowska-Śliwińska, Anna Szerling, Piotr Polak, Krzysztof Grabczewski, Maciej Kozubal, Karina S. Wojciechowska, Laura Stanco, Renata Kruszka, Ryszard Buczyński, Grzegorz Stępniewski, Dariusz Pysz, Michal O. Szymanski, Krzysztof Domański, Piotr Prokaryn, Konrad Dudziński
Publikováno v:
Optical Fibers and Sensors for Medical Diagnostics, Treatment and Environmental Applications XXIII.
Autor:
Renata Kruszka, John L. Reno, Merve Ekmekcioglu, Kamil Kosiel, Gulnur Aygun, Mehmet Ertugrul, Sina Rouhi, Mehtap Ozdemir, Yasemin Demirhan, Maciej Kozubal, Serap Yigen, Anna Szerling, Piotr Prokaryn, Lutfi Ozyuzer
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:15605-15614
The choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal–metal bonding quality for quantum cascade lasers (QCLs). Here, we present a novel approach for the thermocompression bonding of Cu–
Autor:
Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Renata Kruszka, Maciej Kozubal, Adam Barcz, Anna Szerling, Marek Guziewicz, Kamil Kosiel, Karolina Pągowska, Marcin Myśliwiec, Rafal Jakiela
Publikováno v:
Materials Science in Semiconductor Processing. 74:88-97
Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present in detail the designing of hydrogen implant isolation scheme, alongside with its verificati
Autor:
Renata Kruszka, Norbert Kwietniewski, Maciej Kozubal, Maciej Kamiński, Andrzej Taube, Karolina Pągowska, M. Juchniewicz, Anna Szerling
Publikováno v:
Materials Science in Semiconductor Processing. 127:105694
This work presents the development of Fe ion implantation processes for the fabrication of thermally stable isolation of AlGaN/GaN high electron mobility transistors (HEMTs). Experiments, carried out by the triple Fe+ implantation into AlGaN/GaN HEMT
Autor:
Maciej Kamiński, Karolina Pagowska, Krystyna Gołaszewska-Malec, Bogusława Adamczyk-Cieślak, Renata Kruszka, Iwona Sankowska, M. Ekielski, Anna Piotrowska, Kamil Kosiel, Maciej Kozubal, Joanna Zdunek, Marek Guziewicz, Anna Szerling, Andrzej Taube
Publikováno v:
Gallium Nitride Materials and Devices XIV.
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are capable of achieving high breakdown voltage, low operating resistance and large switching speed due to the excellent performance shown by III-N structures. The paper presents selected details o
Autor:
Magdalena Dominik, Pawel Rejmak, J. Libera, Wojtek J. Bock, Marcin Koba, Maciej Kozubal, Kamil Kosiel, Rafal Jakiela, Michał Szymański, Mateusz Smietana, Marek Guziewicz, Małgorzata Kalisz, Karolina Pagowska, Krystyna Lawniczak-Jablonska, K. Gołaszewska-Malec, Joanna Niedziółka-Jönsson
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVI.
Novel optical sensors the most often require thin films or surface structures with strictly controlled properties, playing a critical role in them by initiating or modifying their sensorial responses. Selected results of research on atomic layer depo
Autor:
Maciej Kozubal, Rafal Jakiela, Jozef Cebulski, Piotr Dziawa, Malgorzata Trzyna, Nicolas Berchenko
Publikováno v:
International Journal of Mass Spectrometry. 422:143-145
Present study considers the possibility of using high-mass clusters ions detected by TOF-SIMS for the depth profiling of implanted atoms. The Te and Se samples were implanted with the Bi+ ions at the energy of 500 keV to a fluence of 1 × 1015 cm−2
Autor:
Taube Andrzej, Kaminska Eliana, Sankowska Iwona, Pągowska Karolina, Maciej Kozubal, Kruszka Renata
Publikováno v:
Materials Science in Semiconductor Processing. 122:105491
The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation were studied: encapsulation layer and temperature for activation annealing, and implantati