Zobrazeno 1 - 10
of 69
pro vyhledávání: '"MacQuarrie, E. R."'
Autor:
Frink, Collin C. D., Woods, Benjamin D., Losert, Merritt P., MacQuarrie, E. R., Eriksson, M. A., Friesen, Mark
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially i
Externí odkaz:
http://arxiv.org/abs/2312.09235
Autor:
DeAbreu, A., Bowness, C., Alizadeh, A., Chartrand, C., Brunelle, N. A., MacQuarrie, E. R., Lee-Hone, N. R., Ruether, M., Kazemi, M., Kurkjian, A. T. K., Roorda, S., Abrosimov, N. V., Pohl, H. -J., Thewalt, M. L. W., Higginbottom, D. B., Simmons, S.
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological an
Externí odkaz:
http://arxiv.org/abs/2209.14260
Autor:
McJunkin, Thomas, MacQuarrie, E. R., Tom, Leah, Neyens, S. F., Dodson, J. P., Thorgrimsson, Brandur, Corrigan, J., Ercan, H. Ekmel, Savage, D. E., Lagally, M. G., Joynt, Robert, Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.
Publikováno v:
Phys. Rev. B 104, 085406 (2021)
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostr
Externí odkaz:
http://arxiv.org/abs/2104.08232
Autor:
Kurkjian, A. T. K., Higginbottom, D. B., Chartrand, C., MacQuarrie, E. R., Klein, J. R., Lee-Hone, N. R., Stacho, J., Bowness, C., Bergeron, L., DeAbreu, A., Brunelle, N. A., Harrigan, S. R., Kanaganayagam, J., Kazemi, M., Marsden, D. W., Richards, T. S., Stott, L. A., Roorda, S., Morse, K. J., Thewalt, M. L. W., Simmons, S.
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts
Externí odkaz:
http://arxiv.org/abs/2103.07580
Autor:
MacQuarrie, E. R., Chartrand, C., Higginbottom, D. B., Morse, K. J., Karasyuk, V. A., Roorda, S., Simmons, S.
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band opt
Externí odkaz:
http://arxiv.org/abs/2103.03998
Autor:
Zwolak, Justyna P., McJunkin, Thomas, Kalantre, Sandesh S., Neyens, Samuel F., MacQuarrie, E. R., Eriksson, Mark A., Taylor, Jacob M.
Publikováno v:
PRX Quantum 2, 020335 (2021)
Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement
Externí odkaz:
http://arxiv.org/abs/2102.11784
Publikováno v:
Phys. Rev. Applied 16, 024029 (2021)
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that valley states c
Externí odkaz:
http://arxiv.org/abs/2101.09786
Autor:
Liu, Y. -Y., Philips, S. G. J., Orona, L. A., Samkharadze, N., McJunkin, T., MacQuarrie, E. R., Eriksson, M. A., Vandersypen, L. M. K., Yacoby, A.
Publikováno v:
Phys. Rev. Applied 16, 014057 (2021)
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacit
Externí odkaz:
http://arxiv.org/abs/2012.14560
Autor:
Corrigan, J., Dodson, J. P., Ercan, H. Ekmel, Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Knapp, T. J., Holman, Nathan, McJunkin, Thomas, Neyens, Samuel F., MacQuarrie, E. R., Foote, Ryan H., Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 127, 127701 (2021)
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such contro
Externí odkaz:
http://arxiv.org/abs/2009.13572
Autor:
Dodson, J. P., Holman, Nathan, Thorgrimsson, Brandur, Neyens, Samuel F., MacQuarrie, E. R., McJunkin, Thomas, Foote, Ryan H., Edge, L. F., Coppersmith, S. N., Eriksson, M. A.
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) pr
Externí odkaz:
http://arxiv.org/abs/2004.05683