Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Maayan Bar-Zvi"'
Autor:
Maayan Bar-Zvi, Eric Solecky, Alok Vaid, Ishai Schwarzband, Zhenhua Ge, Hua Zhou, Shay Yasharzade, Xiaoxiao Zhang, Patrick Snow, Ori Shoval, Ofer Adan
Publikováno v:
SPIE Proceedings.
Traditional metrology solutions are facing a range of challenges at the 1X node such as three dimensional (3D) measurement capabilities, shrinking overlay and critical dimension (CD) error budgets driven by multi-patterning and via in trench CD measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c122b0c2bb21075b2f279e238aa20d
https://doi.org/10.1117/12.2087267
https://doi.org/10.1117/12.2087267
Autor:
Maayan Bar-Zvi, Ofer Adan, Deepasree Konduparthi, Xiaoxiao Zhang, Ori Shoval, Alok Vaid, Stefano Ventola, Carmen Osorio, Hua Zhou, Roman Kris, Roi Meir, Zhenhua Ge
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
At 1X node, 3D FinFETS raise a number of new metrology challenges. Gate height and fin height are two of the most important parameters for process control. At present there is a metrology gap in inline in-die measurement of these parameters. In order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c65ab31d1ed590eb300468f16ef656f
https://doi.org/10.1117/12.2046881
https://doi.org/10.1117/12.2046881
Autor:
Jessica Zhou, Maayan Bar-Zvi, Ronny Enge, Bernd Schulz, Carsten Hartig, Daniel Fischer, Ofer Adan, Adam Ge, Alok Vaid, Uwe Groh, Shimon Levi
Publikováno v:
SPIE Proceedings.
The Critical Dimension Scanning Electron Microscope (CDSEM) is the traditional workhorse solution for inline process control. Measurements are extracted from top-down images based on secondary electron collection while scanning the specimen. Secondar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ec6bbc6fb0bf9060bd5eb5dc5d234d
https://doi.org/10.1117/12.2012011
https://doi.org/10.1117/12.2012011
Autor:
Aaron Cordes, Eric Cottrell, Benjamin Bunday, Ram Peltinov, Sean Hand, John A. Allgair, Yohanan Avitan, Maayan Bar-Zvi, Ofer Adan, Vasiliki Tileli
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF (iArF) lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8affb4c50af509218e062f0ee0c1698
https://doi.org/10.1117/12.816249
https://doi.org/10.1117/12.816249
Autor:
Jen Shu, Maayan Bar-Zvi, James Yu, Chris Ngai, Ram Peltinov, Sergey Latinsky, Huixiong Dai, Ami Berger
Publikováno v:
SPIE Proceedings.
Self-Aligned Double Patterning (SADP) scheme is considered as one of the most promising lithographic techniques to meet the challenges for aggressive flash 32 nm semiconductor technology node and beyond. Monitoring the SADP stages implies the necessi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75704c64ddb73026fbbdfd270c3bf83b
https://doi.org/10.1117/12.774408
https://doi.org/10.1117/12.774408
Autor:
Ram Peltinov, Bryan J. Rice, Benjamin Bunday, Maayan Bar-Zvi, Emil Piscani, Dan Cochran, John A. Allgair, Aaron Cordes, Ofer Adan, Ndubuisi G. Orji, Yohanan Avitan, Jeff D. Byers
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF lithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3b8e354b8646db50486e154d0b860e
https://doi.org/10.1117/12.774317
https://doi.org/10.1117/12.774317
Autor:
John A. Allgair, Ram Peltinov, Yohanan Avitan, Bryan J. Rice, John R. Swyers, Jeff D. Byers, Ofer Adan, Benjamin Bunday, Roni Z. Shneck, Maayan Bar-Zvi
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. The industry standard lithographic wavelength has evolved many times, from G-line to I-line, deep ultraviolet (DU
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee44e4c521e06d91f2dc5a86182f7c8b
https://doi.org/10.1117/12.714203
https://doi.org/10.1117/12.714203
Autor:
Benjamin Bunday, John A. Allgair, Maayan Bar-Zvi, E. Solecky, John R. Swyers, J. Beach, Chas Archie, Ofer Adan, Ndubuisi G. Orji, Ram Peltinov
Publikováno v:
SPIE Proceedings.
The need for 3D metrology is becoming more urgent to address critical gaps in metrology for both lithographic and etch processes. Current generation lithographic processing (ArF source, where λ=193 nm) sometimes results in photoresist lines with re-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98092a0a65882fd40c73a112fe34c238
https://doi.org/10.1117/12.714214
https://doi.org/10.1117/12.714214
Autor:
Deepasree Konduparthi, Zhenhua Ge, Maayan Bar-Zvi, Roi Meir, Ori Shoval, Xiaoxiao Zhang, Roman Kris, Ofer Adan, Alok Vaid, Hua Zhou, Stefano Ventola, Carmen Osorio
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:041407
At 1× node, a three-dimensional (3-D) FinFET process raises a number of new metrology challenges for process control, including gate height and fin height. At present, there is a metrology gap in inline in-die measurement of these parameters. To fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fed02cab10ed4482442c3855cc73ae2
https://doi.org/10.1117/1.jmm.13.4.041407
https://doi.org/10.1117/1.jmm.13.4.041407