Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Maarten L. Van de Put"'
Autor:
Madhuchhanda Brahma, Maarten L. Van de Put, Edward Chen, Massimo V. Fischetti, William G. Vandenberghe
Publikováno v:
Physical Review Research, Vol 6, Iss 3, p 033278 (2024)
In this theoretical study, we compare electrostatically doped metal-transition metal dichalcogenide (TMD) edge-contacts versus substitutionally doped edge-contacts in terms of their contact resistance. Our approach involves the utilization of electro
Externí odkaz:
https://doaj.org/article/418932af74994a3ca481424ee73a7b2d
Autor:
Madhuchhanda Brahma, Maarten L. Van de Put, Edward Chen, Massimo V. Fischetti, William G. Vandenberghe
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-9 (2023)
Abstract The performance of transistors based on two-dimensional (2D) materials is affected largely by the contact resistance due to high Schottky barriers at the metal-2D-material interface. In this work, we incorporate the effect of surrounding die
Externí odkaz:
https://doaj.org/article/aa69af3fad69486db325cfa8ee4c7c5b
Publikováno v:
IEEE Access, Vol 11, Pp 64160-64169 (2023)
We propose a pioneering approach that integrates optimization algorithms and technology computer-aided design to automatically optimize laterally-diffused metal-oxide-semiconductors (LDMOS) with a field-oxide structure. We define the ratio of the squ
Externí odkaz:
https://doaj.org/article/2e11c6369146490484618caeecf7dc34
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 361-366 (2022)
We analytically and numerically investigate the performance of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing on mid-voltage (30 V – 100 V) power applications. We derive an analytica
Externí odkaz:
https://doaj.org/article/4ac0540a27404e2a8e89fe80aa1653aa
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Developments in the field of two-dimensional van der Waals materials offer big promise for device applications. This study reports a first-principle investigation on the dielectric properties of 32 exfoliable two-dimensional layered dieletrics for as
Externí odkaz:
https://doaj.org/article/6a23f2e0c1ce462eb1a9ca8f41135830
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract Using first-principles calculations, we investigate the magnetic order in two-dimensional (2D) transition-metal-dichalcogenide (TMD) monolayers: MoS2, MoSe2, MoTe2, WSe2, and WS2 substitutionally doped with period four transition-metals (Ti,
Externí odkaz:
https://doaj.org/article/b3edcc3941274073888285798e052c3e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 711-715 (2020)
We identify an optimum channel length for planar Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance, through systematic device simulation and optimization. We simulate LDMOS devices w
Externí odkaz:
https://doaj.org/article/fe3be25be2964a43b709f07bec9852d6
Autor:
Sabyasachi Tiwari, Joren Vanherck, Maarten L. Van de Put, William G. Vandenberghe, Bart Sorée
Publikováno v:
Physical Review Research, Vol 3, Iss 4, p 043024 (2021)
We compare three first-principles methods of calculating the Curie temperature in two-dimensional (2D) ferromagnetic materials (FM), modeled using the Heisenberg model, and propose a simple formula for estimating the Curie temperature with high accur
Externí odkaz:
https://doaj.org/article/3f09e26db8b34ba1a91800f1a172738e
Autor:
Peter D. Reyntjens, Sabyasachi Tiwari, Maarten L. Van de Put, Bart Sorée, William G. Vandenberghe
Publikováno v:
Materials, Vol 14, Iss 15, p 4167 (2021)
We study the magnetic properties of platinum diselenide (PtSe2) intercalated with Ti, V, Cr, and Mn, using first-principle density functional theory (DFT) calculations and Monte Carlo (MC) simulations. First, we present the equilibrium position of in
Externí odkaz:
https://doaj.org/article/5a01b5d7c3424e8a8d6f10b9d4ce7573
Autor:
Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van de Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe
Publikováno v:
Materials, Vol 12, Iss 18, p 2935 (2019)
Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes i
Externí odkaz:
https://doaj.org/article/65e5ec99c18a4e19b710114a7b5c68d3