The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching

Autor: Hassel, van, J.G., Es, van, C.M., Nouwens, P.A.M., Maahury, J.H., Wellen, J.S.

Publikováno v: Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, 123-131
STARTPAGE=123;ENDPAGE=131;TITLE=Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society
Semiconductor and Integrated Optoelectronics Conference, SIOE '95

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a72045678cb3fa2b7fb74242f5164695
https://research.tue.nl/nl/publications/ae1b120a-13e1-46d6-ae5b-c685e26b696c