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Autor:
Carlos Gómez-Yáñez, Luis Lartundo Rojas, Ma. del Carmen Martínez-Morales, José A. Romero-Serrano
Publikováno v:
Functional Materials Letters. :1642006
Bismuth titanate (Bi4Ti3O[Formula: see text] or BiTO) is known for its high resistance to dielectric fatigue and relatively large remnant polarization. Owing to these characteristics, it has been applied in FeRAM memory. BiTO is also known to be a po