Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ma Zhen-Chang"'
Autor:
Cui Xiao-ming, Qiao Yong-Ping, Dai Lun, Chen Yuan, Ma Zhen-Chang, Ran Guang-Zhao, Qin Guo-Gang, Zong Wan-Hua, Zhang Bo-Rui, Sun Yong-Ke
Publikováno v:
Chinese Physics Letters. 20:298-300
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800 degreesC is about 6 times of that of the un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10c6874c9f869e5d395c966168ba049d
https://doi.org/10.1088/0256-307x/20/2/338
https://doi.org/10.1088/0256-307x/20/2/338
Autor:
Fu Ji-Shi, Ma Zhen-Chang, Qin Guo-Gang, Qiao Yong-Ping, Yuan Fang-Cheng, Ran Guang-Zhao, Zong Wan-Hua, Chan Yuan, Zhang Bo-Rui
Publikováno v:
Acta Physica Sinica. 50:2487
Room temperature photoluminescence (PL) has been observed from Er doped silicon rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39fc78727602ffae34fcd10e41410cca
https://doi.org/10.7498/aps.50.2487
https://doi.org/10.7498/aps.50.2487
Publikováno v:
Acta Physica Sinica. 49:1404
The (SiO2/Si/SiO2) nanoscale double-barrier/n+- Si structures with Si layers of various thicknesses were fabricated by the two-t arget alternative magnetron sputtering technique. The thicknesses of the Si laye rs in the structures are from 2nm to 4nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24242acbe52060255bec44e2764ce86
https://doi.org/10.7498/aps.49.1404
https://doi.org/10.7498/aps.49.1404
Autor:
Li Guo-Hua, Zong Wan-Hua, Han He-Xiang, Wang Zhao-Ping, Zhang Buo-Rui, Ma Shu-Yi, Qin Guo-Gang, Ma Zhen-Chang
Publikováno v:
Acta Physica Sinica. 47:502
Using a Ge-SiO2 (GSO) composite target with the Ge wafer in the target having percentage areas of 0%,5% and 10%,three types of nanometer Ge particles embedded Si oxide films were deposited on p-type Si substrates by the rf magnetron sputtering techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded40dbacae2cedbd1f3343d6954ae14
https://doi.org/10.7498/aps.47.502
https://doi.org/10.7498/aps.47.502
Autor:
Li An-Ping, Zong Wan-Hua, Zhang Yaxiong, Chen Kai-Mao, Sun Yunxi, Zhang Bo-Rui, Ma Zhen-Chang, Qin Guo-Gang
Publikováno v:
Acta Physica Sinica. 46:1011
The structures of Au/Si-rich SiO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si-rich SiO2/p-Si structure, when the forward bias is more than 4V, red li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11a88be38502bf6450275186b981113
https://doi.org/10.7498/aps.46.1011
https://doi.org/10.7498/aps.46.1011