Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ma Ge-Lin"'
Publikováno v:
Chinese Physics. 16:2455-2461
The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed afte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96c969464da343ad6fcb171056cc94bb
https://doi.org/10.1088/1009-1963/16/8/050
https://doi.org/10.1088/1009-1963/16/8/050
Publikováno v:
Acta Physica Sinica. 57:4119
In this paper, the composition structures of SiC epilayer surface are characterized by high resolution X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectrum. The results of XPS wide scan spectroscopy, infrared glancing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00076ea00350e4212c01e99a909a37ec
https://doi.org/10.7498/aps.57.4119
https://doi.org/10.7498/aps.57.4119
Publikováno v:
Acta Physica Sinica. 57:4125
X-ray photoelectron spectroscopy (XPS)is highly adapt to characterize the chemical states of the surface of SiC samples. However, there were notable discrepancies in results for C ls spectra from fitting XPS data reported by using the method of fixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9fafda2e6eef87a2d79e39fbd7a61e
https://doi.org/10.7498/aps.57.4125
https://doi.org/10.7498/aps.57.4125
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