Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide

Autor: C. Laffon, Simon D. Elliott, Lionel Santinacci, David Grosso, Daniel Ferry, Clémence Badie, Maïmouna W. Diouf, Philippe Parent, Maxime E. Dufond, Jacques C. S. Kools

Publikováno v: Chemistry of Materials
Chemistry of Materials, American Chemical Society, 2020, 32 (4), pp.1393-1407. ⟨10.1021/acs.chemmater.9b03621⟩
Chemistry of Materials, 2020, 32 (4), pp.1393-1407. ⟨10.1021/acs.chemmater.9b03621⟩

International audience; Atomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been investigated using titanium isopropoxide (TTIP) and tetrakis(dimethylamino)titanium (TDMAT) in combination with water. The deposition rate and the che

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d75c180742fe40caca48e360a5e55bcf
https://hal.archives-ouvertes.fr/hal-02523927

Protected Light-Trapping Silicon by a Simple Structuring Process for Sunlight-Assisted Water Splitting

Autor: Maïmouna W. Diouf, Bruno Fabre, Francis Gouttefangeas, Maïssa K. S. Barr, Loïc Joanny, Lionel Santinacci, Gabriel Loget

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2016, 8 (37), pp.24810--24818. ⟨10.1021/acsami.6b07350⟩
ACS Applied Materials & Interfaces, 2016, 8 (37), pp.24810--24818. ⟨10.1021/acsami.6b07350⟩

International audience; Macroporous layers are grown onto n-type silicon by successive photoelectrochemical etching in HF containing solution and chemical etching in KOH. This specific latter treatment gives highly antireflective properties of the Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec853fc546d938c8f7f526e9a88a4af5
https://doi.org/10.1021/acsami.6b07350