Výsledky vyhledávání - "Ma, Zhen Yang"

Genetic Analysis of the Cultivars of Ping’ou Hybrid Hazelnut (C. heterophylla Fisch. × C. avellana L.) in China Based on SSR Markers

Autor: Ma, Zhen Yang, Tiantian Zhao, Lisong Liang, Lei Jiang, Lujun Wang, Sihao Hou, Qinghua

Publikováno v: Forests; Volume 14; Issue 7; Pages: 1405

Ping’ou hybrid hazelnut is one of the most profitable tree nuts in China, but economically important cultivars must first be genetically validated to meet industrial demand. Traditional approaches used for cultivar identification are mainly trait-b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=multidiscipl::45d9f34fdcf42ebcfc1e383a3acef31b

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Akademický článek

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The influence of package thermal resistance on the EMP injection damage effect of transistors

Autor: Ma Zhen-Yang, Wang Jing, Ren Xing-Rong, Ren Lihua, Yang Yintang, Chai Chang-Chun

Publikováno v: 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging.

With the thermal effects of substrate and package in mind, electrothermal simulations are performed on the transient response of transistors under the injection of electromagnetic pulses by adopting the 2-D device simulator ISE-TCAD. Simulation resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b17a0baa7a5b17cfca31485d475aaed7
https://doi.org/10.1109/icept.2010.5582767

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Motion of current filaments in avalanching PIN diodes

Autor: Ren Xing-Rong, Ren Lihua, Qiao Liping, Chai Chang-Chun, Ma Zhen-Yang, Yang Yintang, Shi Chunlei

Publikováno v: Journal of Semiconductors. 34:044004

The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations. The simulation results show that the filament can move along the length of the PIN diode back and forth when the self

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b358718f28072a382629e5936b0af50
https://doi.org/10.1088/1674-4926/34/4/044004

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The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base

Autor: Qiao Li-Ping, Shi Chunlei, Chai Chang-Chun, Ma Zhen-Yang, Yang Yintang, Ren Xing-Rong

Publikováno v: Acta Physica Sinica. 62:068501

A two-dimensional electrothermal model of the bipolar transistor (BJT) is established, and the transient behaviors of the BJT originally in the forward-active region are simulated with the injection of electromagnetic pulse from the base. The results

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19369eb8b28d21be0f6ca64738da6f46
https://doi.org/10.7498/aps.62.068501

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Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

Autor: Ma Zhen-Yang, Zhao Ying-Bo, Song Kun, Ren Xing-Rong, Yang Yintang, Chai Chang-Chun, Chen Bin

Publikováno v: Chinese Physics B. 21:098502

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ade39a366ceb3acfca050f78315d3b4c
https://doi.org/10.1088/1674-1056/21/9/098502

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Effects of microwave pulse-width damage on a bipolar transistor

Autor: Chen Bin, Chai Chang-Chun, Ren Xing-Rong, Ma Zhen-Yang, Yang Yintang, Zhao Ying-Bo

Publikováno v: Chinese Physics B. 21:058502

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22423689bf097ddffd4a89580344f147
https://doi.org/10.1088/1674-1056/21/5/058502

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Optical coupling optimization in a novel metal—semiconductor—metal ultraviolet photodetector based on semicircular Schottky electrodes

Autor: Xie Xuanrong, Yang Yintang, Wang Ning, Ma Zhen-Yang, Chai Chang-Chun, Chen Bin

Publikováno v: Journal of Semiconductors. 33:054010

A novel semicircular electrode metal-semiconductor-metal (SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method. For the purpose of model and performance verification, a comprehensi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::557f9d3254a8b58f195d1f604a5b23ab
https://doi.org/10.1088/1674-4926/33/5/054010

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Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor

Autor: Chai Chang-Chun, Song Kun, Yang Yintang, Chen Bin, Ma Zhen-Yang, Jia Hu-Jun

Publikováno v: Acta Physica Sinica. 61:177201

Based on the device operation mechanism and physical model, effects of the improved hetero-material-gate (HMG) approach on deep sub-micron silicon carbide (SiC) metal-semiconductor field-effect transistor (MESFET) are analyzed. By comparing with the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4361485edd8fd1e14fbce91e3e5eee1b
https://doi.org/10.7498/aps.61.177201

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