Výsledky vyhledávání - "Ma, Shawming"

Inductive Coupled Downstream Plasma CD Trim Process Stability Study

Autor: Li Diao, Ma Shawming, Mingjie Jiao, Lu Chen, Vijay M. Vaniapura, Linda Sui, Yi Wang, Yali Fu, Hongwei Chen

Publikováno v: 2019 China Semiconductor Technology International Conference (CSTIC).

CD trim process is incline to run on strip tool because of the low cost and high throughput benefit. However, CD stability is the key challenge. In this article, PR descum process for CD trim was studied on the chamber with substrate temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e2074af4736e3b0f403e076897cf013
https://doi.org/10.1109/cstic.2019.8755658

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Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers

Autor: Yali Fu, M H Kim, Nancy Zhang, Ma Shawming, Tammy Lee, Mingjie Jiao, Frank Wang, Jammy Xiao, Yi Wang

Publikováno v: 2018 China Semiconductor Technology International Conference (CSTIC).

It is well known that different plasma etch tools running exactly the same process step may get mis-matched results and impact other process steps, which can cause issue of the integration to incorporate different type of tools into the same process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44cb1d1cb696ff68ae53561c0d56aa88
https://doi.org/10.1109/cstic.2018.8369227

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Study of downstream CF4 contained plasma process impact on chamber condition

Autor: Yali Fu, Nancy Zhang, HaiAu PhanVu, Ma Shawming, Yi Wang, Bob Elliston, Vijay M. Vaniapura, Mingjie Jiao, Ken Wang

Publikováno v: 2018 China Semiconductor Technology International Conference (CSTIC).

CF 4 gas chemistry is widely used in plasma strip process as addition to other main chemistry such as oxygen (O 2 ) and nitrogen (N 2 ) because of its benefit of removing Si contained residue or some other inorganic crust layers. However, it is not w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::147e7b1f74ed9c1b8d5b1f9169249d46
https://doi.org/10.1109/cstic.2018.8369224

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