Zobrazeno 1 - 10
of 121
pro vyhledávání: '"MVS Chandrashekhar"'
Autor:
James W White, Olivia L Finnegan, Nick Tindall, Srihari Nelakuditi, David E Brown, Russell R Pate, Gregory J Welk, Massimiliano de Zambotti, Rahul Ghosal, Yuan Wang, Sarah Burkart, Elizabeth L Adams, Mvs Chandrashekhar, Bridget Armstrong, Michael W Beets, R Glenn Weaver
Publikováno v:
PLoS ONE, Vol 19, Iss 3, p e0286898 (2024)
The purpose of this study was to evaluate the reliability and validity of the raw accelerometry output from research-grade and consumer wearable devices compared to accelerations produced by a mechanical shaker table. Raw accelerometry data from a to
Externí odkaz:
https://doaj.org/article/fd206f3bca24412389942399b853e818
Autor:
Abdullah Mamun, Kamal Hussain, Richard Floyd, Md Didarul Alam, MVS Chandrashekhar, Grigory Simin, Asif Khan
Publikováno v:
Applied Physics Express.
We report MOCVD-grown Al0.87Ga0.13N/Al0.64Ga0.36N metal–oxide–semiconductor–heterojunction–field–effect–transistors (MOSHFET) on single crystal bulk AlN substrate. As compared to control devices on AlN template, thermal impedance for devi
Publikováno v:
IEEE Sensors Journal. 21:26549-26555
In this work, a large-area MoS2/graphene barristor device, with an electrically tunable Schottky barrier height, has been studied for detection of various gaseous analytes. The Schottky barrier height could be modulated by over 0.65 eV, allowing the
Publikováno v:
The Journal of Physical Chemistry C. 125:17796-17805
Autor:
Mathew L. Kelley, Sakiru L. Abiodun, Mvs Chandrashekhar, Mohi Uddin Jewel, Fiaz Ahmed, Andrew B. Greytak, Mohammad Usman, Hans-Conrad zur Loye, Kamal Hussain
Publikováno v:
ACS Applied Electronic Materials. 3:1550-1555
We demonstrate a fast solution phase ligand exchange process to generate AgBiS2 nanocrystal inks using a cinnamic acid derivative as an additive to accelerate the phase transfer to polar solvents. ...
Autor:
Kyoung Chul Park, Anna A. Berseneva, Sharfa Farzandh, Corey R. Martin, Simon R. Phillpot, Mark D. Smith, Natalia B. Shustova, Otega A. Ejegbavwo, Shubham Pandey, Donna A. Chen, Stavros Karakalos, Amy J. Brandt, Abhijai Mathur, Mvs Chandrashekhar, Brittany J. Heiser, Sophya Garashchuk, Gabrielle A. Leith, Vladislav V. Klepov
Publikováno v:
Chemical Science
Metal node engineering in combination with modularity, topological diversity, and porosity of metal–organic frameworks (MOFs) could advance energy and optoelectronic sectors. In this study, we focus on MOFs with multinuclear heterometallic nodes fo
Autor:
Sheikh Mathab, Peker Milas, Md. Jahangir Alam, MVS Chandrashekhar, Michael G. Spencer, Birol Ozturk
Publikováno v:
Quantum 2.0 Conference and Exhibition.
We report room temperature zero phonon line emission peaks from RC series defects in electron beam irradiated cubic boron nitride crystals, which have the potential to be utilized in quantum sensing experiments.
Autor:
Kamal Hussain, Abdullah Mamun, Richard Floyd, Md Didarul Alam, Michael E. Liao, Kenny Huynh, Yekan Wang, Mark Goorsky, MVS Chandrashekhar, Grigory Simin, Asif Khan
Publikováno v:
Applied Physics Express. 16:014005
We report on high-quality n-Al0.87Ga0.13N-A0.64Ga0.36N heterostructures over single crystal AlN. For these pseudomorphic heterostructures, high-resolution X-ray and X-ray Topographic analysis was used to establish a threading dislocation density of 7
Autor:
Mvs Chandrashekhar, Cole A. Love-Baker, Joshua Letton, Mathew L. Kelley, Andrew B. Greytak, Grigory Simin, Fiaz Ahmed
Publikováno v:
ACS Applied Electronic Materials. 2:134-139
We demonstrate photovoltaic and photoconductive responses to near-infrared light in devices formed by depositing a film of gel permeation chromatography purified PbS quantum dots (QDs) on top of n-...
Autor:
Shahab Mollah, Kamal Hussain, Abdullah Mamun, Md Didarul Alam, MVS Chandrashekhar, Grigory Simin, Asif Khan
Publikováno v:
Applied Physics Express. 15:104001
We report threshold voltage (V TH) control in ultrawide bandgap Al0.4Ga0.6N-channel metal oxide semiconductor heterostructure field-effect transistors using a high-temperature (300 °C) anneal of the high-k ZrO2 gate-insulator. Annealing switched the