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pro vyhledávání: '"MSM JUNCTIONS"'
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 80:5449-5453
We use a two-dimensional, drift-diffusion calculation to illustrate the physics behind the recently described GaAs metal–semiconductor–metal photodetector with an ohmic backgate provided by a p-doped layer. We calculate the transient response of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d46b609674721bb2f11c2ad290b68075
https://doi.org/10.1063/1.362733
https://doi.org/10.1063/1.362733
Autor:
C. M. Hurd, W. R. McKinnon
Publikováno v:
Journal of Applied Physics. 79:1578-1582
A semiconductor with a high resistivity due to a deep trap is called a semi-insulator. A semi-insulator does not always behave like a normal insulator because of so-called bias voltage propagation, which arises from space charge in the deep trap. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad788c75a0d796f5cb9302ce9ed9d67
https://doi.org/10.1063/1.361001
https://doi.org/10.1063/1.361001
Autor:
W. R. McKinnon, C. M. Hurd
Publikováno v:
Journal of Applied Physics. 78:5756-5764
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41c823a0bbc1ef1f5b7e8f75d7e76690
https://doi.org/10.1063/1.359638
https://doi.org/10.1063/1.359638