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Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two‐dimensionality, enabling much smaller devi
Externí odkaz:
https://doaj.org/article/5b245f2d838f49d0898b35f5154c71a3
Autor:
Kanaan Mohammad Musa
Publikováno v:
Operational Research in Engineering Sciences: Theory and Applications, Vol 7, Iss 2 (2024)
Today’s semiconductor devices use the charges of electrons and holes for tasks like light emission and signal processing. Semiconductor spintronics, a newer field, aims to exploit the spin of charge carriers to advance technologies like magnetic la
Externí odkaz:
https://doaj.org/article/6bdb09cb60ad43fe94cc00691ae547c6
Autor:
Muhtasim Alam Chowdhury, Mousam Hossain, Christopher Mastrangelo, Ronald F. DeMara, Soheil Salehi
Publikováno v:
Frontiers in Electronics, Vol 5 (2024)
Hardware-based acceleration approaches for Machine Learning (ML) workloads have been embracing the significant potential of post-CMOS switching devices to attain reduced footprint and/or energy-efficient execution relative to transistor-based GPU and
Externí odkaz:
https://doaj.org/article/dc0a9a94d9e44ad8b969a641b5477922
Publikováno v:
IEEE Access, Vol 12, Pp 26562-26580 (2024)
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network. To achiev
Externí odkaz:
https://doaj.org/article/7646292fe6e54742921a629885f331b5
Autor:
Yuya Fujiwara, Takayuki Kawahara
Publikováno v:
IEEE Access, Vol 12, Pp 150962-150974 (2024)
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side. For use on CiM architecture-based BNN, Magneti
Externí odkaz:
https://doaj.org/article/9f62b4a18cf14024a7359545cb7cc2f8
Publikováno v:
IEEE Access, Vol 12, Pp 132817-132824 (2024)
The emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magne
Externí odkaz:
https://doaj.org/article/c7f5fad6d2fb44edab090320b3a94d10
Autor:
Saion K. Roy, Naresh R. Shanbhag
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 22-30 (2024)
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy. This article proposes the use of signal-to-noise-plus-distortio
Externí odkaz:
https://doaj.org/article/28107b97e2f8428e821dcc1d60abbe85
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Autor:
Yuki Hibino, Tatsuya Yamamoto, Kay Yakushiji, Tomohiro Taniguchi, Hitoshi Kubota, Shinji Yuasa
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a suff
Externí odkaz:
https://doaj.org/article/e3ff599eefef479eba3e9534646e77a3