Zobrazeno 1 - 10
of 27 138
pro vyhledávání: '"MRAM"'
Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many applications. Howe
Externí odkaz:
http://arxiv.org/abs/2410.05587
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error rate (BER)
Externí odkaz:
http://arxiv.org/abs/2410.05174
As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high sc
Externí odkaz:
http://arxiv.org/abs/2410.05164
Autor:
Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C., Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of mag
Externí odkaz:
http://arxiv.org/abs/2409.05584
Akademický článek
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Autor:
Richter, H. J., Mihajlović, G., Chopdekar, R. V., Jung, W., Gibbons, J., Melendez, N. D., Grobis, M. K., Santos, T. S.
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55
Externí odkaz:
http://arxiv.org/abs/2407.20965
Autor:
Adel, Mohammad Javad1, Rezayati, Mohammad Hadi1, Moaiyeri, Mohammad Hossein1 h_moaiyeri@sbu.ac.ir, Amirany, Abdolah2, Jafari, Kian3,4
Publikováno v:
Scientific Reports. 9/4/2024, Vol. 14 Issue 1, p1-17. 17p.
Autor:
Wang, Min, Hou, Zhengyi, Wang, Chenyi, Yan, Zhengjie, Li, Shixing, Du, Ao, Cai, Wenlong, Li, Jinhao, Zhang, Hongchao, Cao, Kaihua, Shi, Kewen, Wang, Bi, Zhao, Yuanfu, Xiang, Qingyi, Wang, Zhaohao, Zhao, Weisheng
We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by
Externí odkaz:
http://arxiv.org/abs/2404.05528
Autor:
Gupta, Rahul, Bouard, Chloé, Kammerbauer, Fabian, Ledesma-Martin, J. Omar, Kononenko, Iryna, Martin, Sylvain, Jakob, Gerhard, Drouard, Marc, Kläui, Mathias
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switc
Externí odkaz:
http://arxiv.org/abs/2404.02821
Autor:
Gu, Yu, Huang, Puyang, Chen, Tianhao, Fu, Chenyi, Chen, Aitian, Peng, Shouzhong, Zhang, Xixiang, Kou, Xufeng
We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation, the non-d
Externí odkaz:
http://arxiv.org/abs/2403.19374