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Autor:
Anthony J. Kenyon, D. Barbier, H Saleh, MP Temple, WH Loh, M Wojdak, Claudio J. Oton, I Ahmad, Alexis Kallis
Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the crack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00816445f002cd00f67dc0e68656cc0a
http://hdl.handle.net/11382/510988
http://hdl.handle.net/11382/510988
