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pro vyhledávání: '"MOS-controlled thyristor"'
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Akademický článek
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Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1043-1049 (2020)
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-
Externí odkaz:
https://doaj.org/article/3c6b46a674e646299f678e151fea3889
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1096-1104 (2020)
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extra
Externí odkaz:
https://doaj.org/article/4fe0b0b24ac343d79c75d512a4fef5d5
Autor:
B. Jayant Baliga
Publikováno v:
The IGBT Device ISBN: 9780323999120
The ruggedness of the insulated gate bipolar transistor (IGBT) is one of its important attributes from the application stand point. Models for the forward-, reverse-, and short circuit safe operating area are provided in this chapter. Latchup of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::626346d0659c481b63599b0545823a1b
https://doi.org/10.1016/b978-0-323-99912-0.00014-3
https://doi.org/10.1016/b978-0-323-99912-0.00014-3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1096-1104 (2020)
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be461dfff1cfa2dd540ba0a7fcda1050
https://ieeexplore.ieee.org/document/9223662/
https://ieeexplore.ieee.org/document/9223662/
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1043-1049 (2020)
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b21e3c1ca6cbce5c4812a9dc997b933
https://ieeexplore.ieee.org/document/9201480/
https://ieeexplore.ieee.org/document/9201480/
Autor:
Wu Yuzhou, Ren Min, Yuan-long Pang, Zehong Li, Xiao-Chi Chen, Lei Li, Bo Zhang, Jinping Zhang, Wu Xiaoli
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2062-2072
The mymargin metal–oxide–semiconductor mymargin (MOS)-controlled thyristor (MCT) has been characterized by MOS gating, high current rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from the conventional MCT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5fa65b99b53cf660258dabb28229f9
https://doi.org/10.1109/tns.2020.3012766
https://doi.org/10.1109/tns.2020.3012766
Autor:
Xu-Qiang Liu, Gui-Xia Yang, Ren Min, Shi Jianmin, Yuan Jian, Xiao-Chi Chen, Lei Li, Zehong Li, Jun-Jie Li
Publikováno v:
IEEE Transactions on Nuclear Science. 67:508-517
The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5a022db73708baea31740257bf79ad
https://doi.org/10.1109/tns.2020.2971646
https://doi.org/10.1109/tns.2020.2971646
Autor:
Hong Tao, Zhou Qijun, Xiaochuan Deng, Bo Zhang, Kemeng Zhang, Gao Wuhao, Zhaoji Li, Yajie Xin, Chao Liu, Qi Zhou, Yijun Shi, Deng Cao, Zuo Huiling, Liu Yawei, Wanjun Chen, Yun Xia
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:214-220
This work demonstrates the failure mechanism of the cathode-short MOS controlled thyristor (CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn-out point localized at the boundary between the active area and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4c7b56132ca3bba26cb45c246451d3
https://doi.org/10.1109/tdmr.2020.2965980
https://doi.org/10.1109/tdmr.2020.2965980