Zobrazeno 1 - 10
of 66
pro vyhledávání: '"MOS-HFET"'
Publikováno v:
IEEE Access, Vol 12, Pp 50177-50183 (2024)
Novel In0.12Al0.88N/AlN/AlxGa $_{1-\mathrm {x}}\text{N}$ /In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded A
Externí odkaz:
https://doaj.org/article/6fb213d6d9ba4f258f3b1441c4e031e3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 421-425 (2023)
This work reports record-high three-terminal on-state drain-source breakdown voltage $(BV_{DS})$ of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wi
Externí odkaz:
https://doaj.org/article/8bf1891360e8421eb672a4748a8a7521
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 256-261 (2023)
This work investigates, for the first time, wide-gap Al0.21Ga0.79N channel metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0.12Al0.76Ga0.12N barrier/buffer and drain field-plate (DFP) designs. High-k and wide-gap
Externí odkaz:
https://doaj.org/article/32d57cba5e4a4109afc9f96437d4b0f2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1003-1008 (2021)
Widegap-channel Al0.65Ga0.35N/Al0.3Ga0.7N/AlN/SiC metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray pyrolysis deposition (USPD) grown Al2O3 gate-oxide demonstrating enhancement-mode (E-mode) operatio
Externí odkaz:
https://doaj.org/article/103530f8aa1f40ad9108068d3e36fed6
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 9-14 (2020)
Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x = 0.75 → 0.25 → 0.75) grown on a SiC substrate are investigated.
Externí odkaz:
https://doaj.org/article/812282a59cad4d8c953ba22fe3bd85cf
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 430-434 (2019)
Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis de
Externí odkaz:
https://doaj.org/article/cd340f9eecde4efdad5773c86532f593
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 68-73 (2018)
This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition
Externí odkaz:
https://doaj.org/article/ab7923b0c87444eabca0c5b05b9c28fe
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1142-1146 (2018)
Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively
Externí odkaz:
https://doaj.org/article/7ab9b3f25e0a471b8da70b7aef89ff5c
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Akademický článek
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