Zobrazeno 1 - 10
of 174
pro vyhledávání: '"MOS-FET"'
Publikováno v:
Sensors, Vol 15, Iss 8, Pp 18061-18079 (2015)
This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage
Externí odkaz:
https://doaj.org/article/b7702e9ff71040629036c0232d67d22c
Autor:
Joseph, Thomas
Scaling has been pivotal in the success of the Moore's law. Using scaling techniques to improve the MOSFET comes at a risk of growing short channel effects. This publication deals with the theoretical study of impact of gate length scaling on planar
Autor:
Pappis, Douglas
Zugleich: Universität Kassel, Dissertation, 2020
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af0abce6a92537f7c6d6d3830dfe2c1b
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Picmaus, Jan
The thesis deals with a concept of turning a conventional petrol powered lawn mower to a battery powered solution which is powered by lithium cells. A division to three chapters, comparison, mechanical and electrical, provides fluency of the whole de
Externí odkaz:
http://www.nusl.cz/ntk/nusl-442784
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
International audience; We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7feb50d6d8de296ed5e909e3bed67e99
https://hal.archives-ouvertes.fr/hal-03017013
https://hal.archives-ouvertes.fr/hal-03017013
Publikováno v:
2020 AEIT International Annual Conference (AEIT).
CMOS technology has been extensively used for the realization of image sensors at Terahertz frequencies. The explanation of its strong efficiency was usually given invoking a mechanism described by the plasma wave detection theory. This model predict
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb1f65e71b2fee0c2d6f0877da6ced36
https://doi.org/10.23919/aeit50178.2020.9241208
https://doi.org/10.23919/aeit50178.2020.9241208
Autor:
Beier-Möbius, Menia
Die vorliegende Arbeit beschäftigt sich mit dem Aufbau und der Durchführung eines Teststand für Gateoxidstresstests mit einer gestuften Anhebung der Spannung und einer anschließenden Datenauswertung, um den Anwendern eine Möglichkeit zur Ermittl
Autor:
Perout, Miroslav
This diploma thesis is dealing with the design of a DC / AC converter for the control of PMSM motors. In the first step, the type of motor and the possibilities of sensing the position of the rotor are described. Subsequently, the power section is de
Externí odkaz:
http://www.nusl.cz/ntk/nusl-413149
Autor:
Erkan Yuce, Mehmet Dogan
Publikováno v:
AEU - International Journal of Electronics and Communications. 94:311-321
New five grounded immittance function simulators are proposed in this paper. The first one is a positive lossless grounded inductor simulator which employs just one inverting buffer plus-type second-generation current conveyor while the other four pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a67d0b7b32d67184fa937162ccb4cb8e
https://doi.org/10.1016/j.aeue.2018.07.016
https://doi.org/10.1016/j.aeue.2018.07.016