Zobrazeno 1 - 10
of 114
pro vyhledávání: '"MOKEROV, V. G."'
Autor:
Kulbachinskii, V. A., Vasil'evskii, I. S., Lunin, R. A., Galistu, G., de Visser, A., Galiev, G. B., Shirokov, S. S., Mokerov, V. G.
Publikováno v:
Semicond. Sci. and Techn. 22 (2007) 222-228
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607300
Autor:
Kulbachinskii, V. A., Lunin, R. A., Rogozin, V. A., Mokerov, V. G., Fedorov, Yu. V., Khabarov, Yu. V., de Visser, A.
Publikováno v:
Semicond. Sci. Technol. 17 (2002) 947-951.
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices repr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0204565
Autor:
Kulbachinskii, V. A., Kytin, V. G., Lunin, R. A., Golikov, A. V., Mokerov, V. G., Bugaev, A. S., Senichkin, A. P., van Schaijk, R. T. F., de Visser, A., Koenraad, P. M.
Publikováno v:
Semicond. Sci. Technol. 14 (1999) 1034-1041.
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temper
Externí odkaz:
http://arxiv.org/abs/cond-mat/9907289
Autor:
Mokerov, V. G.1, Vasil'evskii, I. S.1, Galiev, G. B.1, Požela, J.2 pozela@pfi.lt, Po&žela, K.2, Sužiedųlis, A.2, Jucienų, V.2, Paškevič, Č.2
Publikováno v:
Semiconductors. Apr2009, Vol. 43 Issue 4, p458-462. 5p. 1 Chart, 5 Graphs.
Autor:
Mokerov, V. G.1 vgmokerov@yandex.ru, Kuznetsov, A. L.1, Fedorov, Yu. V.1, Bugaev, A. S.1, Pavlov, A. Yu.1, Enyushkina, E. N.1, Gnatyuk, D. L.1, Zuev, A. V.1, Galiev, R. R.1, Ovcharenko, E. N.1, Sveshnikov, Yu. N.2, Tsatsulnikov, A. F.3, Ustinov, V. M.3
Publikováno v:
Semiconductors. Apr2009, Vol. 43 Issue 4, p537-543. 7p. 1 Black and White Photograph, 1 Chart, 4 Graphs.
Autor:
Požela, J. K.1 pozela@spi.pfi.lt, Mokerov, V. G.2
Publikováno v:
Semiconductors. Mar2006, Vol. 40 Issue 3, p357-361. 5p. 2 Diagrams, 1 Graph.
Autor:
Imamov, R. M.1, Mokerov, V. G.2, Pashaev, É. M.1 pashaev@ns.crys.ras.ru, Subbotin, I. A., Fedorov, Yu. V.2
Publikováno v:
Crystallography Reports. Mar2005, Vol. 50 Issue 2, p320-326. 7p.
Publikováno v:
Semiconductors. Jun2002, Vol. 36 Issue 6, p674. 5p.
Publikováno v:
Semiconductors. Apr2001, Vol. 35 Issue 4, p409. 6p.
Autor:
Galiev, G. B., Mokerov, V. G., Saraıkin, V. V., Slepnev, Yu. V., Shagimuratov, G. I., Imamov, R. M., Pashaev, É. M.
Publikováno v:
Technical Physics. Apr2001, Vol. 46 Issue 4, p411. 6p.