Zobrazeno 1 - 10
of 124
pro vyhledávání: '"MMIC power amplifiers"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
The aim of this study is to disclose how the performance of a gallium nitride (GaN)-based X-band low-noise amplifier is modified by applying a blue-ray (404 nm) laser beam. The tested amplifier employs an aluminium gallium nitride/GaN (AlGaN/GaN) hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8526bfb07ee7c09368ab33723d812405
http://hdl.handle.net/11570/3158802
http://hdl.handle.net/11570/3158802
Autor:
Quan, Wei
(Ga,In)(As,Sb)-based InP double heterojunction bipolar transistors (DHBTs) exhibit an excellent combination of high cutoff frequencies and high breakdown voltage, making them strong candidates for power amplification applications such as 5G telecommu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea546e2072d224326f9c989a50372f92
https://hdl.handle.net/20.500.11850/412955
https://hdl.handle.net/20.500.11850/412955
Autor:
Tabarani, Filipe
This work is the first example of a full-duplex transmit/receive front-end for K/Ka-band satellite communication phased arrays. The implemented monolithic design integrates one receive and two transmit channels with a mixed-signal control unit. The c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65458fe689cb9440ce4ef0feb8a35be6
Autor:
Ramazan Kopru
Publikováno v:
2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET).
The author presents his gratitudes to Isik University for the encouragement of him to present the paper in the conference of PGSRET-2019 and also the financial support of him. Design and simulation of a microwave wideband microstrip unit element band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f468a34e878b8e3d8b7a1f2f6da50213
https://doi.org/10.1109/pgsret.2019.8882695
https://doi.org/10.1109/pgsret.2019.8882695
Publikováno v:
2017 IEEE/MTT-S International Microwave Symposium-IMS 2017
2017 IEEE/MTT-S International Microwave Symposium-IMS 2017, Jun 2017, Honololu, United States. ⟨10.1109/MWSYM.2017.8058804⟩
2017 IEEE/MTT-S International Microwave Symposium-IMS 2017, Jun 2017, Honololu, United States. ⟨10.1109/MWSYM.2017.8058804⟩
International audience; This paper presents the design, the realization and the power characteristics of plastic low cost packaged symmetric Doherty Power Amplifiers (DPA) operating in the 5.5-6.5GHz bandwidth. A single input (SI-DPA) and a dual inpu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b08521f1f84cd8f70ff012d8ad1f8f7c
https://doi.org/10.1109/mwsym.2017.8058804
https://doi.org/10.1109/mwsym.2017.8058804
In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6304a13a87044073ad0227b49f367244
http://hdl.handle.net/11583/2586154
http://hdl.handle.net/11583/2586154
Autor:
Sarah L. Keller, U.K. Mishra, Alessandro Chini, Robert Coffie, Brendan Jude Moran, Sten Heikman, Stephen I. Long, V. Paidi, Steven P. DenBaars, Mark J. W. Rodwell, Shouxuan Xie
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:284-286
A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::175b651b5f0a78ba0c932212b1111e78
https://doi.org/10.1109/lmwc.2003.811682
https://doi.org/10.1109/lmwc.2003.811682
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Alessandro Chini, Steven P. DenBaars, Mark J. W. Rodwell, V. Paidi, Sarah L. Keller, Stephen I. Long, U.K. Mishra, Robert Coffie, Sten Heikman, Brendan Jude Moran, Shouxuan Xie
A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0731dc59ddf2c0099155d50f7b0f7760
http://ieeexplore.ieee.org/document/1179391/
http://ieeexplore.ieee.org/document/1179391/