Zobrazeno 1 - 10
of 128
pro vyhledávání: '"MISRA, SHASHANK"'
Autor:
Rehm, Laura, Morshed, Md Golam, Misra, Shashank, Shukla, Ankit, Rakheja, Shaloo, Pinarbasi, Mustafa, Ghosh, Avik W., Kent, Andrew D.
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses c
Externí odkaz:
http://arxiv.org/abs/2310.18779
Publikováno v:
Journal of Applied Physics 134, 044401 (2023)
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to predict the ban
Externí odkaz:
http://arxiv.org/abs/2304.08636
Autor:
Cardwell, Suma G., Schuman, Catherine D., Smith, J. Darby, Patel, Karan, Kwon, Jaesuk, Liu, Samuel, Allemang, Christopher, Misra, Shashank, Incorvia, Jean Anne, Aimone, James B.
Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads. Our work l
Externí odkaz:
http://arxiv.org/abs/2212.00625
Autor:
Liu, Samuel, Kwon, Jaesuk, Bessler, Paul W., Cardwell, Suma, Schuman, Catherine, Smith, J. Darby, Aimone, James B., Misra, Shashank, Incorvia, Jean Anne C.
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dy
Externí odkaz:
http://arxiv.org/abs/2211.16588
Autor:
Young, Steve M., Katzenmeyer, Aaron M., Anderson, Evan M., Luk, Ting S., Ivie, Jeffrey A., Schmucker, Scott W., Gao, Xujiao, Misra, Shashank
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$\delta$-layers - atomically th
Externí odkaz:
http://arxiv.org/abs/2210.10711
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often require pre
Externí odkaz:
http://arxiv.org/abs/2209.11343
Autor:
Basso, Luca, Kehayias, Pauli, Henshaw, Jacob, Ziabari, Maziar Saleh, Byeon, Heejun, Lilly, Michael P., Bussmann, Ezra, Campbell, Deanna M., Misra, Shashank, Mounce, Andrew M.
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices wit
Externí odkaz:
http://arxiv.org/abs/2207.14254
Autor:
Campbell, Quinn, Koepke, Justine C., Ivie, Jeffrey A., Mounce, Andrew M., Ward, Daniel R., Carroll, Malcolm S., Misra, Shashank, Baczewski, Andrew D., Bussmann, Ezra
Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporat
Externí odkaz:
http://arxiv.org/abs/2207.10631
Autor:
Campbell, Quinn, Dwyer, Kevin J., Baek, Sungha, Baczewski, Andrew D., Butera, Robert E., Misra, Shashank
BCl$_3$ is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precurs
Externí odkaz:
http://arxiv.org/abs/2201.11682
Autor:
Halsey, Connor, Depoy, Jessica, Campbell, DeAnna M., Ward, Daniel R., Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Gao, Xujiao, Scrymgeour, David A., Misra, Shashank
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
http://arxiv.org/abs/2110.11580