Zobrazeno 1 - 10
of 78
pro vyhledávání: '"MIGLIO, LEONIDA"'
Autor:
SCACCABAROZZI, ANDREA, BINETTI, SIMONA OLGA, ACCIARRI, MAURIZIO FILIPPO, Isella, G, Campesato, R, Gori, G, Casale, M, Mancarella, F, Noack, M, von Känel, H, MIGLIO, LEONIDA
Publikováno v:
Progress in photovoltaics
24 (2016): 1368–1377. doi:10.1002/pip.2798
info:cnr-pdr/source/autori:Scaccabarozzi, Andrea; Binetti, Simona; Acciarri, Maurizio; Isella, Giovanni; Campesato, Roberta; Gori, Gabriele; Casale, Maria Cristina; Mancarella, Fulvio; Noack, Michael; von Känel, Hans; Miglio, Leo/titolo:Integration of InGaP%2FGaAs%2FGe triple-junction solar cells on deeply patterned silicon substrates/doi:10.1002%2Fpip.2798/rivista:Progress in photovoltaics (Print)/anno:2016/pagina_da:1368/pagina_a:1377/intervallo_pagine:1368–1377/volume:24
24 (2016): 1368–1377. doi:10.1002/pip.2798
info:cnr-pdr/source/autori:Scaccabarozzi, Andrea; Binetti, Simona; Acciarri, Maurizio; Isella, Giovanni; Campesato, Roberta; Gori, Gabriele; Casale, Maria Cristina; Mancarella, Fulvio; Noack, Michael; von Känel, Hans; Miglio, Leo/titolo:Integration of InGaP%2FGaAs%2FGe triple-junction solar cells on deeply patterned silicon substrates/doi:10.1002%2Fpip.2798/rivista:Progress in photovoltaics (Print)/anno:2016/pagina_da:1368/pagina_a:1377/intervallo_pagine:1368–1377/volume:24
We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma-enhanced chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5023e92ebbd7c3a2b66b9f56c439ac94
http://hdl.handle.net/11311/1005360
http://hdl.handle.net/11311/1005360
Autor:
PEZZOLI, FABIO, GIORGIONI, ANNA, GATTI, ELEONORA, GRILLI, EMANUELE ENRICO, MIGLIO, LEONIDA, Gallacher, K, Isa, F, Biagioni, P, Millar, R.W., Isella, G, Paul, DJ
Silicon offers a compelling platform for developing hybrid architectures that exploit novel functionalities. Heteroepitaxial growth of Ge on Si is a prominent approach to tailor material properties to achieve this goal. However, designing Ge-based he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::e43c7fe2eb1e14faee6bd7f1382fb5ec
http://hdl.handle.net/10281/128891
http://hdl.handle.net/10281/128891
Autor:
MARZEGALLI, ANNA, BASSO BASSET, FRANCESCO, BONERA, EMILIANO, PEZZOLI, FABIO, SCACCABAROZZI, ANDREA, MIGLIO, LEONIDA, Cortinovis, A, Isa, F, Isella, G, Zaumseil, P, Capellini, G, Schröder, T
Our work, focused on the heteroepitaxial Ge/Si (001) system shows that patterned Si substrates in appropriate pillar arrays, featuring micrometric dimensions within the common deep-etching capabilities and array size suitable for several applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::c20f24536bdc85e3559ab5a57a3b4df5
http://hdl.handle.net/10281/131860
http://hdl.handle.net/10281/131860
Autor:
BERGAMASCHINI, ROBERTO, ALBANI, MARCO GIOCONDO, SALVALAGLIO, MARCO, MIGLIO, LEONIDA, MONTALENTI, FRANCESCO CIMBRO MATTIA, Backofen, R, Voigt, A
A phase‐field model allowing for the simulation of heteroepitaxial growth in semiconductors is developed. Both material deposition, mimicking Molecular Beam Epitaxy conditions, and surface diffusion, driven by the thermodynamic tendency toward free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::c6a7c647adbc9616e31eff54266ca631
http://hdl.handle.net/10281/131856
http://hdl.handle.net/10281/131856
Autor:
von Känel, H, MIGLIO, LEONIDA, Crippa, D, Kreiliger, T, Mauceri, M, Puglisi, M, Mancarella, F, Anzalone, R, Piluso, N, La Via, F.
The heteroepitaxial growth of 3C-SiC on Si(001) and Si(111) substrates deeply patterned at a micrometer scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::94c25865538b6312ee0ff2f337ac63be
http://hdl.handle.net/10281/99768
http://hdl.handle.net/10281/99768
Autor:
BERGAMASCHINI, ROBERTO, SALVALAGLIO, MARCO, SCACCABAROZZI, ANDREA, MARZEGALLI, ANNA, MONTALENTI, FRANCESCO CIMBRO MATTIA, MIGLIO, LEONIDA, Isa, F, Isella, G, Backofen, A, Voigt, A, Capellini, G, Skibitzki, O, Yamamoto, Y, Schroeder, T, von Känel, H
The move from dimensional to functional scaling in microelectronics has recently revamped the interest towards integration of high-quality Ge on Si [1]. However, due to the 4% lattice misfit, this is quite a technological challenge. In ref. [2] we sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::8ba8ea3a361b699c2db585cafd00b904
http://hdl.handle.net/10281/91654
http://hdl.handle.net/10281/91654
Autor:
MONTALENTI, FRANCESCO CIMBRO MATTIA, BERGAMASCHINI, ROBERTO, SALVALAGLIO, MARCO, MARZEGALLI, ANNA, MIGLIO, LEONIDA, Backofen, R, ROVARIS, FABRIZIO, ALBANI, MARCO GIOCONDO, Voigt, A
Lattice-mismatched heteroepitaxial growth is nowadays a key step involved in the fabrication of a multitude of devices. However, full control over the different, sometimes competing phenomena taking place during deposition [1] has yet to be reached.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::d311fef34c60f10f522ba83f453eb831
http://hdl.handle.net/10281/91656
http://hdl.handle.net/10281/91656