Zobrazeno 1 - 10
of 444
pro vyhledávání: '"MHEMT"'
Autor:
Jihoon Kim
Publikováno v:
IEEE Access, Vol 9, Pp 113007-113016 (2021)
A power-reconfigurable distributed amplifier (DA) is implemented using a 130 nm metamorphic high-electron mobility transistor (mHEMT) process. Using a mHEMT process with excellent high-frequency characteristics, output power and efficiency at high fr
Externí odkaz:
https://doaj.org/article/b5006c3b829b4340b89b1e9dbdd16a22
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 271-277 (2021)
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature p
Externí odkaz:
https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc
Autor:
Jong‐Min Lee, Woo‐Jin Chang, Dong Min Kang, Byoung‐Gue Min, Hyung Sup Yoon, Sung‐Jae Chang, Hyun‐Wook Jung, Wansik Kim, Jooyong Jung, Jongpil Kim, Mihui Seo, Sosu Kim
Publikováno v:
ETRI Journal, Vol 42, Iss 4, Pp 549-561 (2020)
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The D
Externí odkaz:
https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93
Publikováno v:
Micromachines, Vol 14, Iss 1, p 56 (2022)
In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and lo
Externí odkaz:
https://doaj.org/article/90f4b04275dd45abb98534776b707fae
Akademický článek
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Autor:
Bersant Gashi, Oliver Ambacher, Markus Rosch, Dominik Meier, Laurenz John, Arnulf Leuther, Sandrine Wagner, Axel Tessmann, Rudiger Quay
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 11:660-675
The modeling, design, and experimental evaluation of both a 400-GHz transmitter and receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this article. These S-MMICs are intended for a radar-based system in the aforementi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::391af38474e226126e5291395bede48b
https://doi.org/10.1109/tthz.2021.3099064
https://doi.org/10.1109/tthz.2021.3099064
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 271-277 (2021)
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32757b6a865164bf35e2f57f9a4d62b7
https://doi.org/10.1109/jeds.2021.3054399
https://doi.org/10.1109/jeds.2021.3054399
Autor:
Sosu Kim, Jongmin Lee, Hyun-Wook Jung, Dong Min Kang, Mihui Seo, Hyung Sup Yoon, Byoung-Gue Min, Jongpil Kim, Sung-Jae Chang, Wansik Kim, Jooyong Jung, Woo Jin Chang
Publikováno v:
ETRI Journal, Vol 42, Iss 4, Pp 549-561 (2020)
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8212e22a436d31661da343f9940c2290
https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93
https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93
Autor:
Fabian Thome, Arnulf Leuther
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:741-743
The demonstration of a 75–305-GHz power amplifier (PA) monolithic microwave integrated circuit (MMIC) is presented in this letter. The PA is based on an eight-cell traveling-wave unit amplifier (UA). Each cell contains an RF cascode with two two-fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f0d1c05afb45dc51cd7b8609539b1c4
https://doi.org/10.1109/lmwc.2021.3058101
https://doi.org/10.1109/lmwc.2021.3058101
Akademický článek
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