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Autor:
N. Stavitski
The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b80e45a8d93c15ca7f887fc56e52bd1
https://doi.org/10.3990/1.9789036529396
https://doi.org/10.3990/1.9789036529396
