Numerical and Experimental Evaluation of the Microsecond Pulsed Heating Curve Technique Dedicated to Die Interconnection Characterization

Autor: Jean-Christophe Crebier, Laurent Dupont, Zoubir Khatir, Benoit Thollin, Pierre-Olivier Jeannin, Yvan Avenas

Publikováno v: IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers, 2016, 6 (6), pp. 835-45. ⟨10.1109/TCPMT.2016.2554538⟩

This paper describes and qualifies a partial thermal impedance measurement technique to evaluate the thermal behavior of the physical layers close to the die in power electronic assemblies. The measurement approach is derived from the pulsed heating

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea5aaf695de7136b0e9ee0055795c89e
https://doi.org/10.1109/tcpmt.2016.2554538

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

Autor: Francesco Iannuzzo, Stig Munk-Nielsen, Laurent Dupont, Marco Liserre, Nick Baker

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2017, 32 (4), pp.3099-3111. ⟨10.1109/TPEL.2016.2573761⟩
Baker, N, Dupont, L, Munk-Nielsen, S, Iannuzzo, F & Liserre, M 2017, ' IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current ', I E E E Transactions on Power Electronics, vol. 32, no. 4, pp. 3099-3111 . https://doi.org/10.1109/TPEL.2016.2573761

Infrared measurements are used to assess the measurement accuracy of the peak gate current (I GPeak ) method for Insulated-gate bipolar transistor (IGBT)junction temperature measurement. Single IGBT chips with the gate pad in both the center and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da47d7cfd11cdba1fe097392e0a3619a
https://hal.archives-ouvertes.fr/hal-01704618

Temperature and strain mappings over forward biased power IGBT cross-section area by Œ-Raman spectroscopy

Autor: T. Kociniewski, Z. Khatir

Publikováno v: EPE'15 ECCE-Europe, 2015 17th European Conference on Power Electronics and Applications
EPE'15 ECCE-Europe, 2015 17th European Conference on Power Electronics and Applications, Sep 2015, Geneve, Switzerland. 9p, ⟨10.1109/EPE.2015.7309315⟩

EPE'15 ECCE-Europe, 2015 17th European Conference on Power Electronics and Applications, Geneve, SUISSE, 09-/09/2015 - 10/09/2015; Thermal characterizations inside power device crystal are required for failure analyses physic of power electronic devi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5173136a7fce3eb14b48b290fa811375
https://hal.archives-ouvertes.fr/hal-01675271

Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Autor: Nick Baker, Yvan Avenas, Laurent Dupont, Marco Liserre

Publikováno v: IECON
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society, Nov 2013, Vienne, Austria. p. 942-948, ⟨10.1109/IECON.2013.6699260⟩
Baker, N, Liserre, M, Dupont, L & Avenas, Y 2013, Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters . in Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013 ., 6699260, IEEE Press, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 942-948, 39th Annual Conference of the IEEE Industrial Electronics Society, Wien, Austria, 10/11/2013 . https://doi.org/10.1109/IECON.2013.6699260
Annual Conference of the IEEE Industrial Electronics Society, IECON
Annual Conference of the IEEE Industrial Electronics Society, IECON, 2013, Vienne, Austria. pp.942-948

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society , Vienne, AUTRICHE, 10-/11/2013 - 13/11/2013; The temperature of a power semiconductor device is important for both its optimal operation and reliability. If the temperatu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00b6a622c783fccb894dd8fbcbfe92d5
https://doi.org/10.1109/iecon.2013.6699260

Parameterizable constant temperature anemometer: a new method for the analysis of velocity–temperature coupling in turbulent heat transfer

Autor: Malick Ndoye, G. Arroyo, Dominique Heitz, Joel Delville

Publikováno v: Measurement Science and Technology
Measurement Science and Technology, IOP Publishing, 2010, 21 (7), p.-p. ⟨10.1088/0957-0233/21/7/075401⟩
Measurement Science and Technology, 2010, 21 (7), p.-p. ⟨10.1088/0957-0233/21/7/075401⟩

[Departement_IRSTEA]Ecotechnologies [TR1_IRSTEA]SPEE; A novel anemometer was designed and implemented for simultaneous measurement of velocity and temperature in air flows with a single hot wire probe. The principle of periodically varying the overhe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66ba61a15b868476cfdb98143ade5d4c
https://doi.org/10.1088/0957-0233/21/7/075401