Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data

Autor: Isberg, M., Jonsson, P., Keskitalo, N., Masszi, F., Bleicher, H.

Publikováno v: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1997, Vol. 16, Issue 3, pp. 144-156.

Externí odkaz: http://www.emeraldinsight.com/doi/10.1108/03321649710367585

Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process.

Autor: Soderbarg, A., Edholm, B., Olsson, J., Masszi, F., Eklund, K.H.

Publikováno v: Proceedings of International Electron Devices Meeting; 1995, p975-978, 4p

On P-I-N Diode Parameters and Static Properties at Elevated Temperatures and High Current Densities-Experiment vs. Simulation.

Autor: Bleichner, H., Rosling, M., Jonsson, P., Masszi, F., Vojdani, F., Isberg, M., Nordlander, E.

Publikováno v: ESSDERC '93: 23rd European solid State Device Research Conference; 1993, p895-898, 4p

A theoretically accurate mobility model for semiconductor device drift-diffusion simulation.

Autor: Velmre, E, Udal, A, Kocsis, T, Masszi, F

Publikováno v: Physica Scripta; 1994, Vol. 1994 Issue T54, p263-267, 5p

Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes.

Autor: Masszi, F., Tove, P.-A., Bohlin, K., Norde, H.

Publikováno v: IEEE Transactions on Electron Devices; 1986, Vol. 33 Issue 4, p469-476, 8p