Zobrazeno 1 - 10
of 13
pro vyhledávání: '"MASAYA OGURA"'
Autor:
YOSHINO ISHIZAKI1, MASAYA OGURA1, CHIHIRO TAKAHASHI1, MAYA KANEKO1, AKARI IMURA1, YUTA SHIINO1 y-shiino@geo.sc.niigata-u.ac.jp
Publikováno v:
Plankton & Benthos Research. 2023, Vol. 18 Issue 1, p1-12. 12p.
Autor:
Takeru Kumabe, Masaya Ogura, Shigeyoshi Usami, Atsushi Tanaka, Hiroshi Amano, Shugo Nitta, Manato Deki, Hirotaka Watanabe, Yuto Ando, Yoshio Honda
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fade31517b947233ac567c105cd1c7ff
https://doi.org/10.7567/ssdm.2019.k-4-03
https://doi.org/10.7567/ssdm.2019.k-4-03
Autor:
Satoshi Anada, Yoshio Honda, Miko Matsumoto, Tsukasa Hirayama, Yuto Ando, Hiroshi Amano, Kazuo Yamamoto, Kiyotaka Nakano, Masaya Ogura, Atsushi Tanaka, Yukari Ishikawa
Publikováno v:
Microscopy (Oxford, England). 69(1)
Phase-shifting electron holography (PS-EH) using a transmission electron microscope (TEM) was applied to visualize layers with different concentrations of carriers activated by Si (at dopant levels of 1019, 1018, 1017 and 1016 atoms cm−3) in n-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c8b17beac1f1fe91a54e43e180af1b1
https://pubmed.ncbi.nlm.nih.gov/31711167
https://pubmed.ncbi.nlm.nih.gov/31711167
Autor:
Tsukasa Hirayama, Kazuo Yamamoto, Yuto Ando, Kiyotaka Nakano, Masaya Ogura, Atsushi Tanaka, Yukari Ishikawa, Yoshio Honda, Hiroshi Amano, Satoshi Anada, Miko Matsumoto
Publikováno v:
Microscopy and Microanalysis. 25:50-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8d9ed170495d069f1669ef4f3d31d7
https://doi.org/10.1017/s1431927619000989
https://doi.org/10.1017/s1431927619000989
Autor:
Shugo Nitta, Yuto Ando, Atsushi Tanaka, Hiroji Kawai, Masaya Ogura, Markus Pristovsek, Maki Kushimoto, S. Yagi, Kentaro Nagamatsu, Yoshio Honda, Shigeyoshi Usami, Hiroshi Amano, Manato Deki
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We will review three recent advances. Defects which cause leakage under a high-voltage reverse-biased condition were identified in GaN pin diodes grown on free-standing GaN substrates. The performances of GaN-based horizontal-heterostructure superjun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8c575cc0619eb91435dfe8ef95728f
https://doi.org/10.1109/iedm.2017.8268477
https://doi.org/10.1109/iedm.2017.8268477
Autor:
Hiroshi Amano, Manato Deki, Shigeyoshi Usami, Yuto Ando, Masaya Ogura, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Hayata Fukushima, Yoshio Honda
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9fd113e6407bdab456ab5285224d0b
https://doi.org/10.7567/1347-4065/ab106c
https://doi.org/10.7567/1347-4065/ab106c
Autor:
Kazuo Yamamoto, Kiyotaka Nakano, Atsushi Tanaka, Yuto Ando, Yoshio Honda, Tsukasa Hirayama, Hiroshi Amano, Masaya Ogura, Satoshi Anada, Miko Matsumoto, Yukari Ishikawa
Publikováno v:
Materia Japan. 58:103-103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d22478add1aaafdb77c4731c845f3e
https://doi.org/10.2320/materia.58.103
https://doi.org/10.2320/materia.58.103
Autor:
Shigeyoshi Usami, Masaya Ogura, Maki Kushimoto, Hiroshi Amano, Yoshio Honda, Atsushi Tanaka, Shugo Nitta, Yuto Ando, Hayata Fukushima, Manato Deki
Publikováno v:
Applied Physics Express. 12:026502
A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n diode with a simple edge termination that has a drift layer etched d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bb6f8334524102199097bac478e30b5
https://doi.org/10.7567/1882-0786/aafdb9
https://doi.org/10.7567/1882-0786/aafdb9
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A. 72:998-1002
Many literatures have been given for the stress intensity factors of a crack emanating from a hole or notch in infinite or semi infinite body. However, there has been few detailed discussion about applicability of such stress intensity factors for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::913884bac0f0856f4666566a73a99340
https://doi.org/10.1299/kikaia.72.998
https://doi.org/10.1299/kikaia.72.998
Autor:
Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p