Zobrazeno 1 - 10
of 131
pro vyhledávání: '"MARTIN STRASSBURG"'
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Autor:
Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Though integrating functional organic materials with semiconductor nanostructures is attractive for 3D chip processing, realizing these hybrids remains a challenge. Here, the authors report an oxidative chemical vapor deposition-based process for des
Externí odkaz:
https://doaj.org/article/418ca726380048dab4148970fc1b5206
Autor:
Stefan Wolter, Hendrik Spende, Jan Gülink, Jana Hartmann, Hergo-Heinrich Wehmann, Andreas Waag, Andreas Lex, Adrian Avramescu, Hans-Jürgen Lugauer, Norwin von Malm, Jean-Jacques Drolet, Martin Strassburg
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 836 (2021)
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sen
Externí odkaz:
https://doaj.org/article/506115c3f3724347967feda77a5473ea
Autor:
Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas
Publikováno v:
Nanomaterials, Vol 8, Iss 12, p 1039 (2018)
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobili
Externí odkaz:
https://doaj.org/article/0c83f448de6f4940a249ef0ce6380cea
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVI.
Autor:
Conny Becht, Michael Binder, Bastian Galler, Jürgen Off, Maximilian Tauer, Alvaro Gomez-Iglesias, Heng Wang, Martin Strassburg, Ulrich T. Schwarz
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Autor:
Steffen Bornemann, Christoph Margenfeld, Adrian Stefan Avramescu, Tobias Voss, Marius Grundmann, Jörgen Jungclaus, Zhipeng Zhang, Florian Meierhofer, Irene Manglano Clavero, Andreas Waag, Dominik Scholz, Hendrik Spende, Daniel Splith, Karen K. Gleason, Hans-Jürgen Lugauer, Holger von Wenckstern, Tilman Schimpke, Martin Strassburg, Linus Krieg, Jana Hartmann, Xiaoxue Wang, Stefan Leis, Sascha Gorny
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
Nature communications, 11, Article number: 5092 (2020), DOI 10.1038/s41467-020-18914-7--Nat Commun--https://www.nature.com/ncomms/--http://www.bibliothek.uni-regensburg.de/ezeit/?2553671--2041-1723--2041-1723
Nature Communications
The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a flexible and scalable
Autor:
Ann-Kristin Härdter, Anna Nordloh, Miriam Cyris, Martin Straßburger, Thomas Rinder, Christof E. Dörfer, Sonja Sälzer, Christian Graetz
Publikováno v:
BMC Oral Health, Vol 24, Iss 1, Pp 1-9 (2024)
Abstract Background Up to date, interdental brushes (IDB) are the first choice for interdental cleaning because of their cleaning efficacy. Cylindrical ones must be selected individually according to the size/morphology of the interdental area (IDR),
Externí odkaz:
https://doaj.org/article/97ca1c82de1148138534a751de5a7427
Autor:
Hendrik Spende, Drolet Jean-Jacques, Hans-Jürgen Lugauer, Adrian Stefan Avramescu, Stefan Wolter, Jan Gülink, Jana Hartmann, Andreas Waag, Norwin Von Malm, Andreas Lex, Hergo-Heinrich Wehmann, Martin Strassburg
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sen
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXV.
Welcome and Introduction to SPIE Photonics West OPTO conference 11706: Light-Emitting Devices, Materials, and Applications XXV
Autor:
Hans-Juergen Lugauer, Benoit Deveaud, Gwénolé Jacopin, Georg Rossbach, Tilman Schimpke, Wei Liu, Christian Mounir, Martin Strassburg, Ulrich T. Schwarz, Adrian Stefan Avramescu
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
Physical Review B, American Physical Society, 2019, 100 (23), pp.235301. ⟨10.1103/PhysRevB.100.235301⟩
We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density ($\ensuremath{\sim}{10}^{11}\phan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ebd5d79ec75903df1e61a6403727043
https://hal.archives-ouvertes.fr/hal-02397516/document
https://hal.archives-ouvertes.fr/hal-02397516/document