Zobrazeno 1 - 2
of 2
pro vyhledávání: '"MARIAMICHELA GIANGREGORIO"'
Autor:
Losurdo, M., MARIAMICHELA GIANGREGORIO, Luchena, M., Capezzuto, P., Bruno, G., Barreca, D., Gasparotto, A., Tondello, E.
Publikováno v:
Scopus-Elsevier
2003 MRS Fall Meeting, Boston, USA, 2003
info:cnr-pdr/source/autori:Losurdo M., Giangregorio M.M., Luchena M., Capezzuto P., Bruno G., Barreca D., Gasparotto A., Tondello E./congresso_nome:2003 MRS Fall Meeting/congresso_luogo:Boston, USA/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
Materials Research Society symposia proceedings 786 (2004): E315.1–E315.6.
info:cnr-pdr/source/autori:M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, E. Tondello/titolo:Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD/doi:/rivista:Materials Research Society symposia proceedings/anno:2004/pagina_da:E315.1/pagina_a:E315.6/intervallo_pagine:E315.1–E315.6/volume:786
2003 MRS Fall Meeting, Boston, USA, 2003
info:cnr-pdr/source/autori:Losurdo M., Giangregorio M.M., Luchena M., Capezzuto P., Bruno G., Barreca D., Gasparotto A., Tondello E./congresso_nome:2003 MRS Fall Meeting/congresso_luogo:Boston, USA/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
Materials Research Society symposia proceedings 786 (2004): E315.1–E315.6.
info:cnr-pdr/source/autori:M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, E. Tondello/titolo:Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD/doi:/rivista:Materials Research Society symposia proceedings/anno:2004/pagina_da:E315.1/pagina_a:E315.6/intervallo_pagine:E315.1–E315.6/volume:786
HfO2 dielectric layers have been grown on p-type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t-butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8761a2b57e2e60cf48657dbcaa3f82e5
http://hdl.handle.net/11577/2447583
http://hdl.handle.net/11577/2447583
Autor:
Giovanni Bruno, Maria Losurdo, W. Alan Doolittle, April S. Brown, MariaMichela Giangregorio, Pio Capezzuto, Gon Namkoong
Publikováno v:
Scopus-Elsevier
The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of disloca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e89e1d64c0a44cdf35c84e7292baac51
https://doi.org/10.1557/proc-722-k3.4
https://doi.org/10.1557/proc-722-k3.4
