Zobrazeno 1 - 5
of 5
pro vyhledávání: '"MARIA MERCEDES GABAS PEREZ"'
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
In this paper, a $\ddot{\mathrm{C}}$ uk based single-stage, single-phase transformerless inverter topology is proposed for grid-connected PV applications with inherent buck-boost capability. The proposed topology is presented along with a dedicated p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16d20dd142b22a2983b3e27245d8436
https://doi.org/10.1109/pvsc.2017.8366123
https://doi.org/10.1109/pvsc.2017.8366123
Autor:
María Cruz López Escalante, JOSE RAMOS-BARRADO, Carlos Algora, MARIA MERCEDES GABAS PEREZ, Beatriz Galiana, BEATRIZ GALIANA, Ignacio Rey-Stolle
Publikováno v:
Applied Surface Science. 253:5062-5066
Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 10 18 cm −3 ) and its interface were examined ex situ by XPS combined with Ar + sputtering. These measurements ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27db981ab315cf38d8a22d8deef92c21
https://doi.org/10.1016/j.apsusc.2006.11.013
https://doi.org/10.1016/j.apsusc.2006.11.013
Autor:
Francisco de Paula Martín Jiménez, JOSE RAMOS-BARRADO, MARIA MERCEDES GABAS PEREZ, Dietmar Leinen, RACHID AYOUCHI
Publikováno v:
Thin Solid Films. 426:68-77
b ´´ Abstract Structural, optical, chemical and electrical properties of thin films of ZnO obtained by spray pyrolysis over Pt or silica substrates are determined at temperature ranges between 223 and 373 K. The thin films are pure ZnO with a prefe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d3b96ce54600fbbb68120defc6d035
https://doi.org/10.1016/s0040-6090(02)01331-7
https://doi.org/10.1016/s0040-6090(02)01331-7
Autor:
Iván Garcia, María Cruz López Escalante, JOSE RAMOS-BARRADO, Carlos Algora, MARIA MERCEDES GABAS PEREZ, Beatriz Galiana, BEATRIZ GALIANA, Ignacio Rey-Stolle
Publikováno v:
2007 Spanish Conference on Electron Devices.
This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by metal organic vapor phase epitaxy (MOVPE), by means of X-ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660907c0555a9593c9151a77350641af
https://doi.org/10.1109/sced.2007.384019
https://doi.org/10.1109/sced.2007.384019
Publikováno v:
Applied Physics Letters. 86:216101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46fea7b42924b2031fc093e401a6471
https://doi.org/10.1063/1.1935759
https://doi.org/10.1063/1.1935759