Zobrazeno 1 - 10
of 403
pro vyhledávání: '"MARCO FANCIULLI"'
Autor:
Josh W. Barkby, Fabrizio Moro, Michele Perego, Fabiana Taglietti, Elefterios Lidorikis, Nikolaos Kalfagiannis, Demosthenes C. Koutsogeorgis, Marco Fanciulli
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been exte
Externí odkaz:
https://doaj.org/article/ab67d70c805e4b43b2397bf86dde490f
Autor:
Matteo Belli, Marco Fanciulli
Publikováno v:
Nanomaterials, Vol 14, Iss 1, p 21 (2023)
In a previous investigation, the authors proposed nitrogen as a possible candidate for exploiting the donor spin in silicon quantum devices. This system is characterized by a ground state deeper than the other group V impurities in silicon, offering
Externí odkaz:
https://doaj.org/article/0f89f14eae5446fdab8d0d693a18b0ef
Autor:
Valerio Di Palma, Andrea Pianalto, Michele Perego, Graziella Tallarida, Davide Codegoni, Marco Fanciulli
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 976 (2023)
In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excel
Externí odkaz:
https://doaj.org/article/349ad47041044011bd75ad7932444b91
Autor:
Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of p
Externí odkaz:
https://doaj.org/article/cc0a2887038944919c6dbbbe042fc45c
Publikováno v:
Proceedings, Vol 12, Iss 1, p 53 (2019)
Several spin qubit architectures have been proposed, theoretically investigated and realized at least on the scale of single devices in view of quantum computation and simulation applications. We focus our study on five qubit types: quantum dot spin
Externí odkaz:
https://doaj.org/article/99828e5f925944e4b894b9071824e705
Autor:
Erika Covi, Stefano Brivio, Alexantrou Serb, Themis Prodromakis, Marco Fanciulli, Sabina Spiga
Publikováno v:
Frontiers in Neuroscience, Vol 10 (2016)
Emerging brain-inspired architectures call for devices that can emulate the functionality of biological synapses in order to implement new efficient computational schemes able to solve ill-posed problems. Various devices and solutions are still under
Externí odkaz:
https://doaj.org/article/914fb284c10342bba6678b9504a6734a
Autor:
Valerio Pinchetti, Fabrizio Moro, Baowei Zhang, Marco Fanciulli, Luca De Trizio, Francesco Meinardi, Liberato Manna, Sergio Brovelli
Publikováno v:
ACS Energy Letters. 7:1566-1573
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49a3d6c126466500284b34ff697cacbc
https://doi.org/10.1021/acsenergylett.2c00364
https://doi.org/10.1021/acsenergylett.2c00364
Autor:
Andrea Pulici, Stefano Kuschlan, Gabriele Seguini, Fabiana Taglietti, Marco Fanciulli, Riccardo Chiarcos, Michele Laus, Michele Perego
Publikováno v:
Materials Science in Semiconductor Processing. 163:107548
Ex-situ doping of 30 nm thick silicon-on-insulator (SOI) substrates is performed by using polymers terminated with a doping containing moiety. Poly(methylmetachrylate) polymers with a P containing moiety are used to create a phosphorus δ-layer at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9927d48b9e4883e917eb38c7b5f863a8
https://doi.org/10.1016/j.mssp.2023.107548
https://doi.org/10.1016/j.mssp.2023.107548
Autor:
Sergio Brovelli, Francesco Meinardi, Scott A. Crooker, Matteo L. Zaffalon, Marco Fanciulli, Andrea Camellini, Silvia Rotta Loria, Francesco Carulli, Fabrizio Moro, Valerio Pinchetti, Margherita Zavelani-Rossi
Publikováno v:
Nano Letters
Controlled insertion of electronic states within the band gap of semiconductor nanocrystals (NCs) is a powerful tool for tuning their physical properties. One compelling example is II-VI NCs incorporating heterovalent coinage metals in which hole cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96578c6f71c030f8b8e13c51a5078ebc
https://doi.org/10.1021/acs.nanolett.1c01818
https://doi.org/10.1021/acs.nanolett.1c01818
Autor:
Ying, Liu, Matteo L, Zaffalon, Juliette, Zito, Francesca, Cova, Fabrizio, Moro, Marco, Fanciulli, Dongxu, Zhu, Stefano, Toso, Zhiguo, Xia, Ivan, Infante, Luca, De Trizio, Sergio, Brovelli, Liberato, Manna
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 34(19)
In this work, we report the hot-injection synthesis of Cs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4a2b9bbc21c2f38fc49558f091860241
https://pubmed.ncbi.nlm.nih.gov/36248232
https://pubmed.ncbi.nlm.nih.gov/36248232