Zobrazeno 1 - 10
of 635
pro vyhledávání: '"MACLEAN K"'
Autor:
Bahadorani S, Maclean K, Wannamaker K, Chu ER, Gresores N, Sohn JH, Diaz-Rohena R, Singer MA
Publikováno v:
Clinical Ophthalmology, Vol Volume 13, Pp 1543-1548 (2019)
Sepehr Bahadorani,1 Kyle Maclean,1 Kendall Wannamaker,1 Edward Rickie Chu,1 Nathan Gresores,2 Jeong-Hyeon Sohn,1 Roberto Diaz-Rohena,1 Michael A Singer21Department of Ophthalmology, University of Texas Health Science Center at San Antonio, San Antoni
Externí odkaz:
https://doaj.org/article/3d09e27f5f2a41e68a9509b25d8f3f63
Autor:
MacLean K, Hindman HB
Publikováno v:
Clinical Ophthalmology, Vol 2014, Iss default, Pp 2397-2401 (2014)
Kyle MacLean,1 Holly B Hindman2,3 1University of Rochester School of Medicine and Dentistry, Rochester, NY, USA; 2The Flaum Eye Institute, University of Rochester, Rochester, NY, USA; 3Center for Visual Science, University of Rochester, Rochester, NY
Externí odkaz:
https://doaj.org/article/28a8d9b408ca47db8ec13ab7a091253e
We present a contactless method for measuring charge in a thin film of amorphous germanium (a-Ge) with a nanoscale silicon MOSFET charge sensor. This method enables the measurement of conductance of the a-Ge film even in the presence of blocking cont
Externí odkaz:
http://arxiv.org/abs/1010.0045
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high temperatures, whe
Externí odkaz:
http://arxiv.org/abs/0908.3181
Autor:
Amasha, S., MacLean, K., Radu, Iuliana P., Zumbuhl, D. M., Kastner, M. A., Hanson, M. P., Gossard, A. C.
Publikováno v:
Phys. Rev. B 78, 041306(R) (2008)
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decre
Externí odkaz:
http://arxiv.org/abs/0709.1730
We report electrical transport measurements of arrays of PbSe nanocrystals forming the channels of field effect transistors. We measure the current in these devices as a function of source-drain voltage, gate voltage and temperature. Annealing is nec
Externí odkaz:
http://arxiv.org/abs/0708.1135
Autor:
Amasha, S., MacLean, K., Radu, Iuliana P., Zumbuhl, D. M., Kastner, M. A., Hanson, M. P., Gossard, A. C.
Publikováno v:
Phys. Rev. Lett. 100 046803 (2008)
We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital state
Externí odkaz:
http://arxiv.org/abs/0707.1656
Autor:
Li, Dale, Dong, Yanqun, Ramos, R. G., Murray, J. D., MacLean, K., Dementyev, A. E., Barrett, S. E.
In spectroscopy, it is conventional to treat pulses much stronger than the linewidth as delta-functions. In NMR, this assumption leads to the prediction that pi pulses do not refocus the dipolar coupling. However, NMR spin echo measurements in dipola
Externí odkaz:
http://arxiv.org/abs/0704.3620
Autor:
MacLean, K., Amasha, S., Radu, Iuliana P., Zumbuhl, D. M., Kastner, M. A., Hanson, M. P., Gossard, A. C.
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610679
Autor:
Amasha, S., MacLean, K., Radu, Iuliana, Zumbuhl, D. M., Kastner, M. A., Hanson, M. P., Gossard, A. C.
We measure the relaxation rate $W \equiv T_{1}^{-1}$ of a single electron spin in a quantum dot at magnetic fields from 7 T down to 1.75 T, much lower than previously measured. At 1.75 T we find that $T_{1}$ is 170 ms. We find good agreement between
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607110