Zobrazeno 1 - 8
of 8
pro vyhledávání: '"MA Wank"'
Autor:
Miro Zeman, B. Vet, R.A.C.M.M. van Swaaij, Arno H. M. Smets, Marinus Fischer, David C. Bobela, MA Wank, R. M. C. M. van de Sanden, C.R. Wronski
Publikováno v:
IEEE Journal of Photovoltaics, 2(2), 94-98. IEEE Electron Devices Society
The bandgap of hydrogenated amorphous silicon (a-Si:H) is studied using a unique set of a-Si:H films deposited by means of three different processing techniques. Using this large collection of a-Si:H films with a wide variety of nanostructures, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6cbaad90af00979ef660e6724c9a58
https://doi.org/10.1109/jphotov.2011.2180701
https://doi.org/10.1109/jphotov.2011.2180701
Publikováno v:
Progress in Photovoltaics: Research and Applications. 20:333-342
We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d45caee75a98091c169affe738e62da
https://doi.org/10.1002/pip.1157
https://doi.org/10.1002/pip.1157
Autor:
Miro Zeman, MA Wank, B. Vet, M.C.M. van de Sanden, David C. Bobela, R.A.C.M.M. van Swaaij, C.R. Wronski, A. H. M. Smets, Marinus Fischer
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
The network and nature of hydrogenated amorphous silicon (a-Si:H) are conventionally interpreted in terms of a continuous random network (CRN) of Si-Si bonds, weak Si-Si, Si-H bond and dangling bonds. A CRN requires that the smallest anisotropic feat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb6ab6090783c4c903b4ebddae87b50
https://doi.org/10.1109/pvsc.2011.6186662
https://doi.org/10.1109/pvsc.2011.6186662
Publikováno v:
Journal of Applied Physics, 108(10):103304, 103304-1/9. American Institute of Physics
Journal of Applied Physics, 108 (10), 2010
Journal of Applied Physics, 108 (10), 2010
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ee109453a373c340f7304f887419f1e
https://research.tue.nl/nl/publications/68c47671-5245-4985-b249-8ef0de18ad94
https://research.tue.nl/nl/publications/68c47671-5245-4985-b249-8ef0de18ad94
Autor:
van Racmm René Swaaij, Miro Zeman, Frans D. Tichelaar, MA Wank, van de Mcm Richard Sanden, Andrea Illiberi
Publikováno v:
Physica Status Solidi C: Conferences, 7(3-4), 571-574. Wiley-VCH Verlag
Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::700190dc459846a191cb21e79ff8ae13
https://research.tue.nl/nl/publications/89830cb0-1f38-4310-a0d7-200ca1911e7b
https://research.tue.nl/nl/publications/89830cb0-1f38-4310-a0d7-200ca1911e7b
Publikováno v:
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007, 523-528
STARTPAGE=523;ENDPAGE=528;TITLE=Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007
STARTPAGE=523;ENDPAGE=528;TITLE=Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007
The effect of ion bombardment on the relationship between the critical hydrogen concentration ccrit and the reactor pressure has been investigated for hydrogenated amorphous silicon (a-Si:H) deposited with the expanding thermal plasma-CVD (ETP-CVD) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0acced32db71a1e93467a8a348bf2dc3
https://doi.org/10.1557/proc-0989-a22-04
https://doi.org/10.1557/proc-0989-a22-04
Autor:
Wmm Erwin Kessels, van Racmm René Swaaij, MA Wank, van de Mcm Richard Sanden, M. A. Blauw, Ina T. Martin
Publikováno v:
Plasma Sources Science and Technology, 19(1), 015012-1/10. Institute of Physics
We have applied both sinusoidal and pulse-shaped rf substrate biasing techniques to the expanding thermal plasma deposition of hydrogenated amorphous silicon. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy data demonstrate tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e1b52f4df28ae1ee962a1ce7e3a5473
https://doi.org/10.1088/0963-0252/19/1/015012
https://doi.org/10.1088/0963-0252/19/1/015012
On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates
Publikováno v:
Applied Physics Letters, 95(2):021503, 021503-1/3. American Institute of Physics
Applied Physics Letters, 95 (2), 2009
Applied Physics Letters, 95 (2), 2009
The surface roughness evolution of hydrogenated amorphous silicon (a -Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150-400 °C. The effect of external rf substrate biasing on the coalescence phase i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac7cda65588af123959ae3abd3fe3951
https://doi.org/10.1063/1.3179151
https://doi.org/10.1063/1.3179151