Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M.Yu. Kravetskyi"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 3, Pp 277-281 (2018)
Investigated in this work have been polarization curves typical for the interface p-GaAs–HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytic
Externí odkaz:
https://doaj.org/article/043c8ce20cf14e03b06a514fb894a12c
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 1, Pp 118-122 (2017)
Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively t
Externí odkaz:
https://doaj.org/article/8c2fcd6f39a044ada71650487b71c5c0