Zobrazeno 1 - 10
of 73
pro vyhledávání: '"M.Y. Kao"'
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c76910aeec70a8359998ca7e81340f8
https://doi.org/10.1109/iedm45625.2022.10019433
https://doi.org/10.1109/iedm45625.2022.10019433
Autor:
A.A. Jabra, K.H.G. Duh, P. Ho, A. Tessmer, J.M. Ballingall, P.M. Smith, M.Y. Kao, S.M.J. Liu, P.C. Chao
Publikováno v:
IEEE Electron Device Letters. 11:59-62
Very low-noise 0.15- mu m gate-length W-band In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3493e287b889be2a006ea10c52afba5a
https://doi.org/10.1109/55.46931
https://doi.org/10.1109/55.46931
Publikováno v:
52nd Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2509037c9c7c95634da071c6ee0a7992
https://doi.org/10.1109/drc.1994.1009455
https://doi.org/10.1109/drc.1994.1009455
Autor:
M.Y. Kao, D.P. Smith, F.R. Bardsley, J.J. Komiak, R.S. Brozovich, L.W. Yang, D.R. Helms, D.E. Houston, Karen J. Nordheden
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7202096ae4d5825c5911e29cd61061cd
https://doi.org/10.1109/gaas.1994.636947
https://doi.org/10.1109/gaas.1994.636947
Publikováno v:
IEEE Microwave and Guided Wave Letters. 5:230-232
We have developed 0.1-/spl mu/m gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 /spl mu/m gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b227bef2e1752e17a3816f4aff102530
https://doi.org/10.1109/75.392284
https://doi.org/10.1109/75.392284
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Quarter-micron InAlAs/InGaAs planar-doped HEMTs (high-electron-mobility transistors) lattice-matched to InP have exhibited state-of-the-art noise and gain performance at frequencies up to 94 GHz. Minimum noise figures of 0.5, 1.2, and 2.1 dB have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b5da53f424fb9a01e14bedec8d4885
https://doi.org/10.1109/mwsym.1989.38845
https://doi.org/10.1109/mwsym.1989.38845
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A 0.15- mu m-gate-length double-heterojunction pseudomorphic HEMT (high electron mobility transistor) that exhibits state-of-the-art power and noise performance is reported. Power results include record power-added efficiencies of 51%, 41% and 23% at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbad1b852d6c365df5647cb88972192c
https://doi.org/10.1109/mwsym.1989.38887
https://doi.org/10.1109/mwsym.1989.38887
Autor:
A.A. Jabra, S. M. J. Liu, P. Ho, K.H.G. Duh, M.Y. Kao, P.C. Chao, A.J. Tessmer, J.M. Ballingall, P.M. Smith, T. H. Yu
Publikováno v:
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
State-of-the-art high-electron-mobility-transistor (HEMT) devices have been fabricated on InAlAs/InGaAs/InP. Devices with 30- mu m and 50- mu m gate widths and 0.15- mu m gate length were fabricated using an all-electron-beam lithography process. Aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0993bc0a96ea39bb6c0f442b7f8d2ec8
https://doi.org/10.1109/cornel.1989.79821
https://doi.org/10.1109/cornel.1989.79821
Autor:
D.I. Goldstick, M.Y. Kao, M.A.G. Upton, A.A. Jabra, K.H. Snow, W.F. Kopp, K.A. Wypych, W.M. Kong, B.R. Lee, P. Ho, G.J. Tessmer
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Three monolithic high electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) were developed that were designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare, and 20-GHz military satellite communications applications. The first LNA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5858df7dd99fae9962ed942a266d3c9c
https://doi.org/10.1109/mwsym.1989.38700
https://doi.org/10.1109/mwsym.1989.38700
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
Short-gate-length high-electron-mobility transistors (HEMTs) are reported that have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies; minimum noise figure of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz from 0.25- mu m HEMTs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a61dfea9d8c35e0a1059bf8520d7af8
https://doi.org/10.1109/mwsym.1988.22182
https://doi.org/10.1109/mwsym.1988.22182