Zobrazeno 1 - 10
of 95
pro vyhledávání: '"M.W. Cresswell"'
Autor:
A.J. Snell, Andrew Bunting, A.W.S. Ross, Stewart Smith, A.M. Gundlach, M.W. Cresswell, A.J. Walton, R.A. Allen, B.J.R. Shulver, L.I. Haworth, J.T.M. Stevenson
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:495-503
Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these struct
Publikováno v:
IEEE Transactions on Engineering Management. 41:143-151
This paper describes a new procedure for using a machine-learning classification technique coupled with an expert system to increase profitability and improve throughput in a semiconductor manufacturing environment. The authors show how to use this p
Autor:
B.J.R. Shulver, J.T.M. Stevenson, Stewart Smith, M.W. Cresswell, A.M. Gundlach, Camelia Dunare, A.W.S. Ross, Andrew Bunting, L.I. Haworth, A.J. Walton, R.A. Allen, A.J. Snell
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures.
The novel overlay test structure reported in this paper was purposely designed to serve as an application-specific reference material. It features standard frame-in-frame optical overlay targets embedded in electrical test features and fabricated by
Autor:
M.W. Cresswell, Andrew Bunting, A.J. Snell, L.I. Haworth, J.T.M. Stevenson, A.M. Gundlach, A.W.S. Ross, B.J.R. Shulver, A.J. Walton, R.A. Allen
Publikováno v:
2006 IEEE International Conference on Microelectronic Test Structures.
A novel copper damascene process is reported for fabrication of electrical critical dimension (ECD) reference material. The method of fabrication first creates an initial "silicon preform" whose linewidth is transferred into a trench using a silicon
Publikováno v:
Proceedings of the IEEE International Conference on Microelectronic Test Structures.
This paper describes a new test structure for use in determining the thickness of a uniform conducting film. The structure incorporates the van der Pauw cross method to determine the effective sheet resistance of a vertical, uniformly doped cross sec
Publikováno v:
Proceedings of the IEEE International Conference on Microelectronic Test Structures.
Autor:
R.A. Allen, M.W. Cresswell, C.E. Murabito, W.F. Guthrie, L.W. Linholm, C.H. Ellenwood, E. Hal Bogardus
Publikováno v:
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..
Publikováno v:
Proceedings of the 1989 International Conference on Microelectronic Test Structures.
It is shown that multiple regression analysis of data from test structures designed to evaluate VLSI fabrication processes for multilevel interconnects can produce a reduced information set that can be operated on by the ID3 algorithm to produce cand
Publikováno v:
IEEE/SEMI International Symposium on Semiconductor Manufacturing Science.
The authors describe a procedure for using induction-based classification techniques for identifying relationships between work-in-process (WIP) test structure data and future IC yield at wafer test on a wafer-by-wafer or lot-by-lot basis. The relati