Zobrazeno 1 - 10
of 91
pro vyhledávání: '"M.V. Vedernikov"'
Autor:
M.V. Vedernikov
Publikováno v:
Rusin. :67-90
With the outbreak of WWI (1914–1918), the participating countries began to promote separatist movements on their own territory, which aimed to destroy the foundations of hostile multinational empires. Of particular interest to the Russian authoriti
Autor:
A.A. Gromyko, V.B. Belov, L.S. Bisson, O.V. Butorina, A.D. Vasilchenko, M.V. Vedernikov, K.A. Godovanyuk, D.A. Danilov, N.B. Kondratieva, A.V. Kotov, R.N. Lunkin, N.M. Mezhevich, R.M. Plyusnin, S.A. Roginko, A.A. Rozhin, P.A. Sharikov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc63d1bad293bd730d94c35fbe416645
https://doi.org/10.55604/9785777708953
https://doi.org/10.55604/9785777708953
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
E. A. Gurieva, M.V. Vedernikov, V. K. Zaĭtsev, M. I. Fedorov, G. N. Isachenko, P. P. Konstantinov, Alexander T. Burkov
Publikováno v:
Physics of the Solid State. 51:1796-1799
The results of a study of Mg2Si x Sn1 − x solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–70
Publikováno v:
Journal of Electronic Materials. 38:990-993
The thermoelectric power and electrical conductance of bundles of indium antimonide nanowires with a diameter of about 5 nm have been measured over the temperature range of 80 K to 400 K. In the range from 80 K to 300 K, the temperature dependence of
Autor:
A. A. Shabaldin, P. P. Konstantinov, E. A. Gurieva, M. I. Fedorov, M.V. Vedernikov, V. K. Zaĭtsev, A. Yu. Samunin, Alexander T. Burkov, I. S. Eremin, G. N. Isachenko
Publikováno v:
Physics of the Solid State. 48:1486-1490
The transport properties of Mg2 X 0.4Sn0.6 (X = Si, Ge) solid solutions are investigated. It is shown that these materials can be rendered p-type with a hole concentration of up to 4 × 1019 cm−3. The Hall coefficient, thermopower, and electrical c
Publikováno v:
Semiconductors. 34:1214-1218
The thermoelectric parameters of an artificially anisotropic material composed of semiconducting and superconducting layers are considered. The transverse thermoelectric figure of merit and the sensitivity of a sensor responding to small heat fluxes
Publikováno v:
Semiconductors. 34:897-901
The maximum densities of holes generated by cation vacancies, as well as thermoelectric parameters of (Pb1−x Snx)1−y Tey solid solutions with tin content x in the range from 0.4 to 0.6, were investigated. It is shown that each vacancy produces fo
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 69:317-323
The electron relaxation time on acoustical phonons, the electrical conductivity, and the phonon-drag thermopower of a semiconductor superlattice with quasi-two-dimensional quantum wells are calculated. The inelasticity of the scattering of charge car
Autor:
Yu. I. Ravich, G. T. Alekseeva, M.V. Vedernikov, L. V. Prokof’eva, E. A. Gurieva, P. P. Konstantinov
Publikováno v:
Semiconductors. 32:716-719
The Hall coefficient, thermoelectric power, and electrical conductivity in PbTe doped with La, Pr, Sm, and Gd are investigated in the temperature range (77–700) K. The impurity atoms act as donors with an electrical activity that increases with tem