Zobrazeno 1 - 10
of 17
pro vyhledávání: '"M.S. Benrakkad"'
Autor:
Joan Ramon Morante, M.S. Benrakkad, J.M. Lopez-Villegas, M A Benitez, J. Esteve, Josep Samitier
Publikováno v:
Journal of Micromechanics and Microengineering. 5:132-135
In this work, microRaman spectroscopy is applied for the stress analysis of LPCVD polysilicon films deposited on SiO2 sacrificial layers. The features of the first-order Si Raman signal (shape, width and position of maximum) are analyzed taking into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acfd8997b4620e61ba5dd0d3deb2459d
https://doi.org/10.1088/0960-1317/5/2/019
https://doi.org/10.1088/0960-1317/5/2/019
Publikováno v:
Microelectronic Engineering. 28:225-228
The study of the oxidation process of amorphous SiGe alloys is reported from the microstructural characteristics of the obtained oxides by wet oxidation at 700 °C during 30 minutes. The analysis has been carried out by TEM, Raman, FTIR and XPS measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44da78096bb5aa4cff509eaebb150661
https://doi.org/10.1016/0167-9317(95)00049-e
https://doi.org/10.1016/0167-9317(95)00049-e
Autor:
Josep Samitier, M.S. Benrakkad, Joan Ramon Morante, M.A. Benitez, J. Esteve, Jan-Åke Schweitz
Publikováno v:
Scopus-Elsevier
Very low stress gradient across the polysilicon layers is required for the fabrication of large micromechanical structures based oil surface micromnachining technologies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4459afc910e08637b568fa7a4de4aa1
https://doi.org/10.1109/sensor.1995.721751
https://doi.org/10.1109/sensor.1995.721751
Autor:
Josep Samitier, B. Garrido, J.M. Lopez-Villegas, Joan Ramon Morante, Adolf Canillas, M.S. Benrakkad, Enric Bertran
Publikováno v:
MRS Proceedings. 258
The electro-optical properties of hydrogenated amorphous silicon nitride films (a-SiNx:H) prepared by rf glow discharge of SiH4 and N2 have been determined as a function of the silicon content in the alloy. The stoichiometry and structure of the laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd490669a8ed0529f606e4ddf43df7af
https://doi.org/10.1557/proc-258-655
https://doi.org/10.1557/proc-258-655
Autor:
Jaume Esteve, M.A. Benitez, Josep Samitier, Luis Fonseca, M.S. Benrakkad, Jan-Åke Schweitz, Joan Ramon Morante
Publikováno v:
Scopus-Elsevier
A very low stress gradient across the polysilicon layers is required for the fabrication of large micromechanical structures based on surface-micromachining technologies. In this work the residual stress and the stress gradient of 2 μm thick LPCVD p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::478057a1097eb75ad2919304d4b98757
http://www.scopus.com/inward/record.url?eid=2-s2.0-0012582834&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0012582834&partnerID=MN8TOARS
Autor:
Joan Ramon Morante, J.M. Lopez-Villegas, M.S. Benrakkad, Josep Samitier, Alejandro Pérez-Rodríguez, T. Jahwari
Publikováno v:
Scopus-Elsevier
Raman spectroscopy is applied for the analysis of polysilicon films deposited on SiO2 sacrificial layers. Different deposition technologies and processing parameters have been studied. The features of the first order Si Raman signal (shape, width and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5317b9efcb31839c11cf699f58725ec
http://www.scopus.com/inward/record.url?eid=2-s2.0-0028595486&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0028595486&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Stress and stress gradient in polycrystalline silicon films, as active micromechanical layers, are analysed taking into account the obtention technology, doping procedure and thermal annealing treatments. Micro-P Raman and X-ray diffraction sin 2ψ p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28817b31dc245be1e8f22918a8edd25e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000808091&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000808091&partnerID=MN8TOARS
Autor:
P. Lange, M.S. Benrakkad, J.M. Lopez-Villegas, Joan Ramon Morante, Josep Samitier, M. Kirsten
Publikováno v:
Scopus-Elsevier
In this paper we report the mechanical and the structural properties of thick polysilicon layers performed by using atmospheric pressure (ATM) and reduced pressure (RP) chemical vapour deposition in order to obtain minimum residual stress and stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b6d4478fb8a7bea0caf7ae29dd6155b
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029387343&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029387343&partnerID=MN8TOARS
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