Zobrazeno 1 - 10
of 111
pro vyhledávání: '"M.R. Yahya"'
Akademický článek
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Akademický článek
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Autor:
N. Abu Haris, M. Draman, D. C. Tee, Tien-Ping Tan, S. Saidon, Mohd Izhan Mohd Yusoff, Z. Lambak, M.R. Yahya, Safwati Ibrahim
Publikováno v:
2017 5th International Conference on Information and Communication Technology (ICoIC7).
This paper presents the methodology uses in preparing a conversation speech corpus for acoustic model training of Malay automatic speech recognition (ASR) in telco call center. Data preparation is significant and should be done properly in order to b
Autor:
Abdul Fatah Awang Mat, Amiza Rasmi, M.R. Yahya, Arjuna Marzuki, Ahmad Ismat Abdul Rahim, Mohd Nizam Osman
Publikováno v:
Microelectronics International. 27:25-32
PurposeThe purpose of this paper is to discuss medium‐power amplifier (MPA) design using parasitic‐aware core‐based approach.Design/methodology/approachThis paper discusses a core‐based design approach, which can also deliver multi‐band rad
Conference
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Autor:
M.R. Yahya, Mohd Azmi Ismail, Amiza Rasmi, Arjuna Marzuki, Awang Mat, Ali Yeon, Zaliman Sauli, Abdul Fatah, Rasidah Sanusi, K. Norhapizin
Publikováno v:
International Journal of Computer and Electrical Engineering. :104-106
104 Abstract—This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and g
Publikováno v:
2011 IEEE Regional Symposium on Micro and Nano Electronics.
This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω
Publikováno v:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
This paper present the design of 3-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω i
Publikováno v:
2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT).
The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers ar
Autor:
Abdul Fatah Awang Mat, Syamsuri Yaakob, Muhammad Rafie' Che Rose, M.R. Yahya, Abdullah Man, Mohd Nizam Osman
Publikováno v:
2009 IEEE 9th Malaysia International Conference on Communications (MICC).
In this paper, we present a short-range point-to-point gigabit wireless transmission at 50 GHz utilising prototypes of simple transmitter and receiver front-ends. The particular prototypes have been assembled from millimetre-wave (MMW) components wit