Zobrazeno 1 - 10
of 28
pro vyhledávání: '"M.R. Namordi"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 39:1468-1474
A 50- Omega coplanar waveguide (CPW) resonator designed for a fundamental frequency of about 4.75 GHz was fabricated on LaAlO/sub 3/. Two versions were fabricated: the first using 1.9- mu m-thick gold and the second using 0.6- mu m-thick YBa/sub 2/Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5508dc04eef9329885766dc38262b0db
https://doi.org/10.1109/22.83819
https://doi.org/10.1109/22.83819
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A 3-bit GaAs analog-to-digital converter (ADC) using a parallel architecture has been designed and fabricated. A latched regenerative comparator design approach is used. Depletion mode MESFET technology was used for circuit implementation. Successful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::301dbd015c81457b9773fe2da6a352f7
https://doi.org/10.1109/mcs.1985.1113648
https://doi.org/10.1109/mcs.1985.1113648
Autor:
W.M. Duncan, M.R. Namordi
Publikováno v:
IEEE Transactions on Electron Devices. 29:402-410
In this work, three different logic cell configurations, two with and one without a source-follower are employed: These logic cells are arranged in 5- and 11-stage ring oscillator (RO) circuits. The circuits are then fabricated with nominal gatelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f44fc8dfc917be90f69c7e6542c233f
https://doi.org/10.1109/t-ed.1982.20715
https://doi.org/10.1109/t-ed.1982.20715
Autor:
M.R. Namordi, H.W. Thompson
Publikováno v:
Solid-State Electronics. 18:499-508
The ideal semiconductor target for EBS devices is most closely approximated by the Schottky barrier junction, with Al having the highest figure of merit. Accordingly, large area (1·27 mm 2 ), high-field Al n Si Schottky barrier junctions surroun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0670ae91329ad47d78c88ae2e18ac5df
https://doi.org/10.1016/0038-1101(75)90025-8
https://doi.org/10.1016/0038-1101(75)90025-8
Autor:
D.J. Coleman, M.R. Namordi
Publikováno v:
IEEE Transactions on Electron Devices. 27:282-286
An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT's. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925977cef39c48e030817e6134e202cf
https://doi.org/10.1109/t-ed.1980.19851
https://doi.org/10.1109/t-ed.1980.19851
Autor:
J.E. Kenney, M.R. Namordi, M.D. Rubin, T. Ueda, A. Nara, I. Uchizaki, J.J. Whalen, C.L. Cuccia, J.W. Amoss, V.A. Monaco, V. Sokolov, G.D. Alley, R.D. Hess, P.L. Fleming, E.W. Matthews, S. Hori, M.C. Calcatera, H.L. Thal, A. Ballato, S.K. Salmon, T. Susuki, J.M. Borrego, H.E. Carlson, M.L. Thorn, T. Ishii, T. Smith, M. Nakatani, E.T. Harkless, A.R. Kerr, D.N. Zuckerman, K. Yoshinobu, N. Tomita, E.C. Niehenke, Bang-Sup Song, C.A. Hoer, Y. Oda, C. Tsironis, C. Naldi, U. Niggebrugge, T.J. Lukaszek, F.H. Doerbeck, Han-chiu Wang, E.J. Walsh, K. Atsuki, R.J. Gutmann, G.N. Hill, W.A. Cox, E.A. Uliana, F. Fillicori, C.T. Rucker, G.F. Engen, S.E. Sussman-Fort, E. Yamashita, T. Itoh
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:1093-1098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97cac3e9434c8287b562f02b7e3052da
https://doi.org/10.1109/tmtt.1979.1129796
https://doi.org/10.1109/tmtt.1979.1129796
Autor:
M.R. Namordi, W.A. White
Publikováno v:
IEEE Electron Device Letters. 3:264-267
A novel GaAs MESFET logic gate is described. The gate uses depletion mode FET's and is a static one. It is about 30% faster and consumes about 30% of the power of the BFL gate. Ring oscillator circuits have been fabricated using one embodiment of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476a13f365a5ca477e5c7b9bd64bbd30
https://doi.org/10.1109/edl.1982.25562
https://doi.org/10.1109/edl.1982.25562
Publikováno v:
IEEE Transactions on Electron Devices. 29:1805-1809
Circuit parasitic capacitances for GaAs ring oscillators (RO's) were calculated and used for SPICE2 circuit simulation. The simulated delays agreed with the measured data to within ∼10 percent. The results indicate that the effect of the circuit pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd4b388f03ed5559c1560dc67ef8b49
https://doi.org/10.1109/t-ed.1982.21030
https://doi.org/10.1109/t-ed.1982.21030
Publikováno v:
IEEE Transactions on Electron Devices. 26:1074-1080
The fabrication and first successful operation of Ge/GaAs heterojunction IMPATT's are described. Theoretical analyses were employed to establish the optimum materials specifications for maximum microwave performance. The analyses revealed that the he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf181e8e7dafb453b61f3312df7d296
https://doi.org/10.1109/t-ed.1979.19548
https://doi.org/10.1109/t-ed.1979.19548
Autor:
R. Pitts, W.C. Holton, F.H. Doerbeck, R.W. Gooch, W.G. Manns, M.R. Namordi, J.E. Gunther, D.F. Weirauch, K.H. Surtani, W.C. Scott
Publikováno v:
1977 International Electron Devices Meeting.
A thin profile (two-inch depth) digitally addressed cathodoluminescent display has been developed which is capable of presenting 1920 alphanumeric 5 × 9 dot matrix characters at a spot brightness of 500 ft-L. Multilevel addressing techniques permit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b5765a2bd48a09288bf7c01bf3e4dd
https://doi.org/10.1109/iedm.1977.189167
https://doi.org/10.1109/iedm.1977.189167