Zobrazeno 1 - 10
of 191
pro vyhledávání: '"M.R. Gokhale"'
Autor:
V.P. Salvi, D. Kanjilal, A.R. Damle, Brij M. Arora, M.R. Gokhale, Yousuf Pyar Ali, A.M. Narsale
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 168:229-236
Single crystal GaAs substrates implanted with 100 MeV 28Si ions have been investigated by optical transmission over photon energy range 0.7–1.4 eV. The αx values increase with increasing dose until samples are nearly opaque (αx>1) over the entire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378bb9bac2f5166f389d595110fed059
https://doi.org/10.1016/s0168-583x(99)00890-3
https://doi.org/10.1016/s0168-583x(99)00890-3
Publikováno v:
Journal of Crystal Growth. 203:302-308
The synthesis of thallium containing III–V compounds for long wavelength (>1.7 μm) photonic device applications is investigated using gas-source molecular beam epitaxy. With this approach, we attempted the growth of homogenous InTlP and InGaTlAs a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d498d23cd2ec2d4aa4827b810de509b3
https://doi.org/10.1016/s0022-0248(99)00123-2
https://doi.org/10.1016/s0022-0248(99)00123-2
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1407-1416
We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing. These circuits consist of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc51ad742428a5a8ad392aa9419ab99
https://doi.org/10.1109/3.605564
https://doi.org/10.1109/3.605564
Publikováno v:
IEEE Journal of Quantum Electronics. 33:2266-2276
We describe the design and experimental results for high-power, high-efficiency, low threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free InGaAs-(In)GaAs(P)-InGaP lasers. The decrease in the internal losses with an inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2073add18bea95f2eb9a5d0b80268ec7
https://doi.org/10.1109/3.644109
https://doi.org/10.1109/3.644109
Publikováno v:
IEEE Photonics Technology Letters. 16:2221-2223
Lasers based on asymmetric twin waveguide integration technology are limited by the necessity of pumping the tapers to avoid absorption losses within this section of the active region. Here, we demonstrate that the threshold current is reduced by arg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf3e95ab85fa214b213c4da0a3a1534
https://doi.org/10.1109/lpt.2004.834488
https://doi.org/10.1109/lpt.2004.834488
Publikováno v:
IEEE Photonics Technology Letters. 13:845-847
We describe a high-bandwidth high-responsivity low-polarization sensitivity p-i-n photodiode based on an integratable asymmetric twin-waveguide structure. Incident light is collected by a diluted large-fiber guide followed by transfer to a thin-coupl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b1e4baf7ba5adf834fdd330bd7fd71
https://doi.org/10.1109/68.935823
https://doi.org/10.1109/68.935823
Publikováno v:
IEEE Photonics Technology Letters. 13:600-602
We demonstrate monolithic integration of a twin-waveguide Mach-Zehnder terahertz optical asymmetric demultiplexer (MZ-TOAD). The InGaAsP-InP device operates at 1.55 /spl mu/m wavelength and has two semiconductor optical amplifiers in the asymmetric M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c515ebf4abd35d001df908f7e9c9e12b
https://doi.org/10.1109/68.924035
https://doi.org/10.1109/68.924035
Publikováno v:
IEEE Photonics Technology Letters. 12:468-470
We demonstrate a single frequency, 1.55 /spl mu/m wavelength laser based on an asymmetric twin-waveguide structure using a single growth step and a simple fabrication process. The external Bragg grating is formed on the passive ridge waveguide, optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c530176bda0d347a4f069bbb2e8951
https://doi.org/10.1109/68.841255
https://doi.org/10.1109/68.841255
Publikováno v:
IEEE Photonics Technology Letters. 12:131-133
We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) operation of InGaAsN-GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58c5964346551a252d531761b394df5
https://doi.org/10.1109/68.823493
https://doi.org/10.1109/68.823493
Publikováno v:
IEEE Photonics Technology Letters. 12:68-70
We demonstrate InGaAsPN p-i-n photodetectors lattice-matched to InP substrates with cutoff wavelengths larger than 1.65 /spl mu/m. The narrow bandgap InGaAsPN absorption layers were grown by gas source molecular beam epitaxy using an RF plasma nitrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db732262abc248d22e6b7df31beb63dc
https://doi.org/10.1109/68.817496
https://doi.org/10.1109/68.817496