Zobrazeno 1 - 10
of 111
pro vyhledávání: '"M.R. Brozel"'
Autor:
M.R. Brozel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 395:88-93
GaAs particle detectors for use in the LHC at CERN will be subject to a considerable fluence of energetic particles. In this note, possible effects of this irradiation on the production of damage centres in these detectors will be discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b88cc5009a45346cf95f348557154c
https://doi.org/10.1016/s0168-9002(97)00623-2
https://doi.org/10.1016/s0168-9002(97)00623-2
Publikováno v:
Materials Science and Engineering: B. 44:330-333
Measurements of the charge collection efficiency (CCE) of radiation detectors fabricated from semi-insulating GaAs wafers have indicated that the CCE is reduced principally by trapping of electrons. Further measurements on wafers which have different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d4925649c2f6ce53c270f7546a91e2
https://doi.org/10.1016/s0921-5107(96)01815-6
https://doi.org/10.1016/s0921-5107(96)01815-6
Publikováno v:
Materials Science and Engineering: B. 44:203-207
Variable temperature resistivity mappings have been conducted on samples of undoped gallium arsenide, grown by liquid encapsulated Czochralski (LEG), using a non-contacting electrical technique. These have been used to produce maps of the spatial var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad8225764a863976ce7e7ab16958ad
https://doi.org/10.1016/s0921-5107(96)01786-2
https://doi.org/10.1016/s0921-5107(96)01786-2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 380:46-49
Measurements of the Charge Collection Efficiency (CCE) of radiation detectors fabricated from semi-insulating GaAs wafers which have different thermal histories have been undertaken. A correlation between charge collection efficiency and electrical r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c6c519470b298857b6da6e1ec2ee23
https://doi.org/10.1016/s0168-9002(96)00325-7
https://doi.org/10.1016/s0168-9002(96)00325-7
Publikováno v:
IEEE Transactions on Nuclear Science. 42:247-253
The charge collection response of semi insulating GaAs p-i-n detectors to alpha particles has been measured and compared to the results of a simple charge carrier drift model. The model uses an electric field distribution which has been measured usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d008cce2cfd36fba29f9bf4525753108
https://doi.org/10.1109/23.467842
https://doi.org/10.1109/23.467842
Autor:
M.R. Brozel, Sebahattin Tüzemen
Publikováno v:
Materials Science and Engineering: B. 28:130-133
The mapping of EL2 defects and those that give rise to reverse contrast absorption images in semi-insulating GaAs have an inverse spatial correlation in terms of defect concentrations. EL2 defects are known to be associated with arsenic antisites; th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a71dcc9960dc7df2e8124b71814c3c70
https://doi.org/10.1016/0921-5107(94)90031-0
https://doi.org/10.1016/0921-5107(94)90031-0
Publikováno v:
Journal of Electronic Materials. 21:389-394
We demonstrate that near bandedge photoluminescence efficiency in SI bulk GaAs can be increased by low temperature photo-quenching of native point defects in the material. These defects cause infrared absorption at photon energies just below the band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805dbd2ed2ad698089560c55f1cb8893
https://doi.org/10.1007/bf02660471
https://doi.org/10.1007/bf02660471
A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique
Publikováno v:
Semiconductor Science and Technology. 7:A269-A274
The authors have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method. They have employed A/B etching, EL2 mapping and near-bandgap absorption (reverse contrast, RC) mapping to reveal dislocati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df4c7e36500871c807b8e9cba7ac8d37
https://doi.org/10.1088/0268-1242/7/1a/051
https://doi.org/10.1088/0268-1242/7/1a/051
Autor:
R. Addinall, R.C. Newman, Ian T. Ferguson, M.J.L. Sangster, M.R. Brozel, V. K. M. Sharma, D. McPhail, A. Mohades-Kassai
Publikováno v:
Materials Science Forum. :1027-1032
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca63326757858880cb6a088b41de6d4d
https://doi.org/10.4028/www.scientific.net/msf.83-87.1027
https://doi.org/10.4028/www.scientific.net/msf.83-87.1027
Publikováno v:
Semiconductor Science and Technology. 7:A36-A40
A novel technique, double-beam photoluminescence (DBPL), is introduced. This is used to investigate photoquenching effects of deep levels which affect near-band-edge photoluminescence (PL) in bulk-grown semi-insulating (SI) GaAs. The authors show tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fc5c2590c713f51fd4b7871b433417
https://doi.org/10.1088/0268-1242/7/1a/007
https://doi.org/10.1088/0268-1242/7/1a/007