Zobrazeno 1 - 10
of 98
pro vyhledávání: '"M.R Frei"'
Autor:
K.K. Ng, M. Sergent, B. Yang, Hans-J. Gossmann, Joseph Petrus Mannaerts, G. D. Wilk, Peide D. Ye, J. Kwo, Minghwei Hong, M.R. Frei, J. Bude
Publikováno v:
Journal of Electronic Materials. 33:912-915
We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant because Al2O3 possesse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380758612083f19701f0355879904551
https://doi.org/10.1007/s11664-004-0220-9
https://doi.org/10.1007/s11664-004-0220-9
Autor:
J. Bude, Joseph Petrus Mannaerts, K.K. Ng, J. Kwo, Peide D. Ye, M.R. Frei, B. Yang, H.-J.L. Gossmann, Minghwei Hong, M. Sergent
Publikováno v:
Journal of Crystal Growth. 251:837-842
Employing Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric and Si-doped GaAs as conducting channel, depletion-mode GaAs MOSFETs were fabricated. DC I – V and transfer curves show no pinch-off and drain current hysteresis. Etching a thin layer from the top o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528f83cc18c7279292d23a553f5aefe7
https://doi.org/10.1016/s0022-0248(02)02273-x
https://doi.org/10.1016/s0022-0248(02)02273-x
Autor:
M.R Frei, R.K Montgomery, T.-Y Chiu, C. R. Abernathy, T. R. Fullowan, B. Tseng, Fan Ren, Stephen J. Pearton, P.R Smith, James Robert Lothian
Publikováno v:
Solid-State Electronics. 46:1301-1305
The observed initial gain degradation of AlGaAs/GaAs heterojunction bipolar transistors under current stress was investigated. The change in device characteristics is attributed to a dissociation of passivating hydrogen in the base layer during stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b10fc8779a901196934d699d96f3332
https://doi.org/10.1016/s0038-1101(02)00079-5
https://doi.org/10.1016/s0038-1101(02)00079-5
Autor:
C.A. King, D.A. Rich, K. Ng, M.R. Frei, S. Moinian, A.S. Chen, V.D. Archer, J. De Blauwe, Hong-Ha Vuong, Marco Mastrapasqua, Tony Ivanov, M.S. Carroll, Edward B. Harris
Publikováno v:
IEEE Microwave Magazine. 3:44-55
As process technology advances, we will see SoC systems with millions of digital gates combined with RF circuits operating in the tens of GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ccb845b21a544d7adbbc1d2b2a1da4
https://doi.org/10.1109/mmw.2002.1004051
https://doi.org/10.1109/mmw.2002.1004051
Publikováno v:
IEEE Transactions on Electron Devices. 47:1401-1405
We report experimental results demonstrating the use of transient enhanced diffusion (TED) caused by silicon implant for "tuning" boron out-diffusion. The effect was measured as a function of the silicon implant dose and anneal temperature, and a ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62cd2f8c08546312b3d54465061a2cc7
https://doi.org/10.1109/16.848283
https://doi.org/10.1109/16.848283
Publikováno v:
IEEE Transactions on Biomedical Engineering. 46:117-120
Fourteen Sprague-Dawley rats were exposed to pulses produced by a Bournlea ultra-wideband (UWB) pulse generator (rise time, 318-337 ps; maximum E field, 19-21 kV/m). Exposures at a repetition frequency of 1 kHz for 0.5 s or to repetitive pulse trains
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0f7a52c2d18694fb1ea1ef0156a0f3d
https://doi.org/10.1109/10.736767
https://doi.org/10.1109/10.736767
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1433-1438
Porous Si layers up to 250 /spl mu/m in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and secondary ion mass spectroscopy (SIMS) analysis are done to address the manufacturability issue of porous Si.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f731a5ff2da8547ecab3fa7fda1e11db
https://doi.org/10.1109/4.711344
https://doi.org/10.1109/4.711344
Autor:
K.K. Ng, Peide D. Ye, Joseph Petrus Mannaerts, M.R. Frei, H.-J.L. Gossmann, S.N.G. Chu, M. Sergent, Minghwei Hong, J. Kwo, G. D. Wilk, J. Bude, B. Yang
Publikováno v:
IEEE Electron Device Letters. 24:209-211
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7dbd8ace721865f2ff0bbb9e2d6768
https://doi.org/10.1109/led.2003.812144
https://doi.org/10.1109/led.2003.812144
Autor:
P. Palestri, Isik C. Kizilyalli, A. Pacelli, W. Lin, M.S. Carroll, P.R. Smith, L. Bizzarro, R.W. Johnson, Marco Mastrapasqua, George K. Celler, T.G. Ivanov, C. A. King, M.R. Frei
Publikováno v:
IEEE Electron Device Letters. 23:145-147
We describe a low fabrication cost, high-performance implementation of SiGe BiCMOS on SOL The use of high-energy implant allows the simultaneous formation of the subcollector and an additional n-type region below the buried oxide. The combination of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f675001306b88223d4fbf9f3565c60e
https://doi.org/10.1109/55.988819
https://doi.org/10.1109/55.988819
Publikováno v:
Journal of Crystal Growth. 124:243-248
Selective epitaxy was studied at 76 Torr, with a very large masked area, for the binaries GaAs, InAs, GaP, and InP, and for GaInAs and GaInP respectively lattice-matched to InP and GaAs. For the binaries, the growth rate enhancements in the open area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f93d1316a40ce0578890d0bf52d896
https://doi.org/10.1016/0022-0248(92)90466-v
https://doi.org/10.1016/0022-0248(92)90466-v